Integrated manufacturing method of capacitive temperature, humidity and air pressure sensors based on silicon anode bonding of soi chip device layer
An air pressure sensor and humidity sensor technology, which is applied in the integrated manufacturing of humidity and air pressure sensors, and capacitive temperature fields, can solve the problems of increased research and development costs, increased research and development difficulty, and long interconnection lines, and achieves improved system reliability and interconnection lines. The effect of length reduction and area reduction
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[0020] The present invention will be further explained below in conjunction with the accompanying drawings.
[0021] An integrated manufacturing method for capacitive temperature, humidity and air pressure sensors based on silicon anodic bonding of SOI sheet device layer, the method is realized based on SOI sheet and glass substrate 6, the SOI sheet is composed of substrate silicon 1 , buried oxide layer 2, and device layer silicon 3. Using the combination of step-by-step deep silicon etching technology and device layer silicon and glass anode bonding technology, the thin film structure, the flat large capacitance structure and the sealed cavity structure of the air pressure sensor and temperature sensor are prepared at the same time, and finally the humidity sensor, air pressure sensor and Integrated structure of temperature sensor. The method comprises the steps of:
[0022] Step 1), such as figure 1 As shown, the device layer silicon 3 is dry etched, and the etching dept...
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