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Substrate processing apparatus

A substrate processing and substrate technology, which is applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as poor batches, inability of resist coating treatment to be carried out properly, and reduced yield, etc. The effect of improving yield and suppressing batch defects

Active Publication Date: 2018-07-27
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the hydrophobization treatment is not properly performed, the subsequent resist coating process will not be properly performed, for example, batch defects and yield reductions will occur

Method used

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  • Substrate processing apparatus
  • Substrate processing apparatus
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Experimental program
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Embodiment Construction

[0058] Embodiments of the present invention will be described below. In this specification and the drawings, elements having substantially the same functional configuration are denoted by the same symbols to omit repeated description.

[0059]

[0060] First, the configuration of a substrate processing system in this embodiment including a hydrophobizing treatment device as a substrate processing device will be described. figure 1 It is a plan view schematically showing the outline of the structure of the substrate processing system 1 . figure 2 and image 3 The outlines of the internal structure of the substrate processing system 1 are schematically shown, respectively, a front view and a rear view. In the substrate processing system 1, predetermined processing is performed on a wafer W as a substrate to be processed.

[0061] like figure 1 As shown, the substrate processing system 1 has a structure in which a cassette station 10, a processing station 11, and an interf...

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Abstract

The present invention provides for the proper determination of the concentration of the process gas using a simple device. The hydrophobization treatment device (41) of the present invention processesthe wafer (W) using a treatment gas containing ions. The hydrophobization treatment device (41) includes: a processing container (300) for accommodating the wafer (W); a gas supply portion (320) forsupplying HMDS gas to the inside of the processing container (300); an exhausting portion (340) that exhausts the inside of the processing container (300), and an ion sensor (346), wherein the ion sensor (346) is used for at least detecting quantities of ions contained in gas in the processing container (300), the gas supply portion (320) or the exhausting portion (340).

Description

technical field [0001] The invention relates to a substrate processing device for processing a substrate to be processed by using a processing gas containing ions. Background technique [0002] For example, in the photolithography process in the manufacture of semiconductor devices, for example, the hydrophobization treatment for making the surface of a semiconductor wafer (hereinafter referred to as "wafer") hydrophobized is sequentially performed, and a resist solution is coated on the hydrophobized wafer to form a resist. Resist coating treatment of the resist film, exposure treatment of exposing the resist film to a predetermined pattern, development treatment of developing the exposed resist film, etc., thereby forming a predetermined resist on the wafer. agent pattern. [0003] The purpose of the above-mentioned hydrophobization treatment is to improve the adhesive force between the wafer surface and the resist film, and is performed to change the hydrophilic wafer su...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/67
CPCH01L21/02H01L21/67017H01L21/67242H01L21/67213
Inventor 赤田光桥本和也
Owner TOKYO ELECTRON LTD