Double adjustable terahertz wave reflection filter
A filter and graphene layer technology, applied in the field of filters, can solve problems such as single function and control mode, and achieve the effect of compact structure, high control efficiency and simple structure
Inactive Publication Date: 2018-08-03
CHINA JILIANG UNIV
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Problems solved by technology
However, the traditional filter has the disadvantage of a single function and control method, while the multi-functional and multi-control terahertz wave filter can not only reduce costs, improve integration, but also have flexible control methods
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Embodiment 1
[0016] The structure of the double tunable terahertz wave reflection filter is as described before ( Figure 1~2 ), which will not be repeated here. However, in this embodiment, the specific parameters of each component are as follows: the periodic distance a between adjacent basic units of the graphene layer 1 = 68 μm, and the adjustment range of the radius r of the circular graphene constituting the basic unit is 10-15 μm. 1. The indium tin oxide film layer 2, the molybdenum disulfide layer 3, the indium antimonide layer 4, and the gold base layer 5 are all in a square shape. The side length of the indium tin oxide thin film layer 2 is 340 μm, and the thickness is 5 μm. The molybdenum disulfide layer 3 has a side length of 340 μm and a thickness of 7 μm. The indium antimonide layer 4 has a side length of 340 μm and a thickness of 8 μm. The gold base layer had a side length of 340 μm and a thickness of 20 μm. The performance curves of the filters are tested by COMSOLMulti...
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Abstract
The invention discloses a double adjustable terahertz wave reflection filter which comprises a graphene layer, an indium tin oxide thin film layer, a molybdenum disulfide layer, an indium antimonide layer and a gold base layer. The graphene layer is located at the uppermost layer. The indium tin oxide thin film layer is below the graphene layer. The molybdenum disulfide layer is below the indium tin oxide thin film layer. The indium antimonide layer is below the molybdenum disulfide layer. The gold base layer is below the indium antimonide layer. The graphene layer is composed of 5*5 basic units. Each basic unit consists of three mutual phases of circular graphene. By changing the radius r of the circular graphene, resonant frequency is changed or bias direct current voltage is applied tomolybdenum disulfide. The effective dielectric constant of molybdenum disulfide is changed to realize a filter adjustable function. The double adjustable terahertz wave reflection filter provided by the invention has the advantages of simple and compact structure, various control, high control efficiency and the like, and can be applied in many fields of terahertz.
Description
technical field [0001] The invention relates to the field of filters, in particular to a dual adjustable terahertz wave reflection filter. Background technique [0002] Terahertz technology is a new technology developed in the late 1980s. The unique frequency range of terahertz waves (located between the microwave frequency band and the optical frequency band) covers the molecular vibration and rotation spectra of most macromolecular substances, so most macromolecular substances in the terahertz frequency band regardless of their absorption, reflection or emission spectra have Obvious fingerprint characteristics, which is not available in microwave. Compared with traditional light sources, terahertz pulsed light sources have many unique properties, such as: transient, low-energy, etc. These characteristics determine that terahertz technology is very important in the fields of industrial applications, medicine, communication, and biology. application prospects. Therefore, ...
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IPC IPC(8): H01P1/20
CPCH01P1/20
Inventor 李九生龙洁
Owner CHINA JILIANG UNIV