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MIM capacitor and method of making the same

A technology of capacitors and metal capacitors, applied in the field of MIM capacitors, can solve problems such as limited, increased variation, and expensive

Inactive Publication Date: 2019-12-17
QUALCOMM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, in a conventional MIM capacitor with a bottom plate (M1), a middle plate (M2) thinner than the bottom plate (M2), and a top plate (M3) thicker than the bottom plate (M1) to ensure dielectric integrity, if the thickness of the bottom plate (M1) grow too much, the base (M1) surface can become highly irregular, resulting in a lower MIM breakdown voltage and increased variation
The bottom plate (M1) has a much higher resistance than the top plate (M3), causing the bottom plate (M1) to become an RF Q-factor bottleneck
Therefore, process or design changes are required to reduce the effective baseplate (M1) resistance to avoid MIM capacitor quality factor degradation due to current crowding in the thin baseplate (M1)
However, these changes are expensive and physically limited

Method used

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  • MIM capacitor and method of making the same

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Embodiment Construction

[0017] The exemplary methods, devices, and systems disclosed herein advantageously address industry needs, as well as other previously unidentified needs, and alleviate shortcomings of conventional methods, devices, and systems. For example, a tapered MIM capacitor may include tapered metal plates or electrodes configured such that most of the current travels through a short length of thin MIM metal. This reduces losses and increases capacitor quality factor.

[0018] Figure 1A and Figure 1B Side and top views of a MIM capacitor according to some examples of the present disclosure are illustrated. Such as Figure 1A As shown in , the MIM capacitor 100 may include a first capacitor 102 , a second capacitor 104 , a third capacitor 106 and a fourth capacitor 108 connected in series. The use of series capacitors allows the voltage handling capability of the MIM capacitor 100 to be increased. Although four capacitors are shown, it should be understood that more or fewer capaci...

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Abstract

An exemplary MIM capacitor may include a first metal plate, a dielectric layer on the first metal plate, a second metal plate on the dielectric layer, a via layer on the second metal plate, and a third metal plate on the via layer. A metal plate, wherein the second metal plate has a tapered profile with a first side and a second side that is longer than the first side such that the second side provides a lower resistance path for electrical current.

Description

technical field [0001] The present disclosure relates generally to metal-insulator-metal (MIM) capacitors, and more particularly, but not exclusively, to MIM capacitors having tapered capacitor plates. Background technique [0002] Various capacitive structures are used as electronic components in integrated circuits such as radio frequency integrated circuits (RFICs) and monolithic microwave integrated circuits (MMICs). Such capacitive structures include, for example, metal oxide semiconductor (MOS) capacitors, p-n junction capacitors, and metal-insulator-metal (MIM) capacitors. For some applications, MIM capacitors may offer certain advantages over MOS and p-n junction capacitors whose frequency characteristics may be limited due to depletion layers formed in the semiconductor electrodes. MIM capacitors can exhibit improved frequency and temperature characteristics. In addition, MIM capacitors are formed in metal interconnect layers, thereby reducing CMOS transistor proc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/522H01L27/08H01L49/02H01G4/33H01L29/94H10N97/00
CPCH01G4/33H01L23/5223H01L27/0805H01L28/87H01G4/38H01G4/40H01G4/01H01G4/30H01L29/94H01L28/86
Inventor D·F·伯迪D·D·金N·S·穆达卡特J-H·J·兰左丞杰C·H·芸M·F·维勒兹金钟海
Owner QUALCOMM INC