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A kind of exposure method and the manufacturing method of film pattern

An exposure method and thin film pattern technology, which are applied to the photolithography process of pattern surface, microlithography exposure equipment, photolithography process exposure device, etc., can solve the problems of inconsistency in actual size, etc.

Inactive Publication Date: 2021-04-23
BOE TECH GRP CO LTD
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Embodiments of the present invention provide an exposure method and a thin film pattern manufacturing method, which are used to solve the problem that the actual size of the same sub-pattern in the upper thin film pattern is inconsistent due to the level difference of the lower layer film

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  • A kind of exposure method and the manufacturing method of film pattern
  • A kind of exposure method and the manufacturing method of film pattern
  • A kind of exposure method and the manufacturing method of film pattern

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Embodiment Construction

[0034] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0035] The embodiment of the present application provides an exposure method, such as figure 1 As shown, the method includes:

[0036] S101. Obtain a preset mask pattern, the hollow area of ​​the mask pattern is as follows figure 2 The position of the region to be exposed 101 on the film layer 10 to be exposed corresponds to that shown.

[0037] It should be noted that the above-mentioned photomask pattern is a preset pattern that needs to be formed on the ...

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Abstract

The embodiment of the present application provides an exposure method and a thin film pattern manufacturing method, which relate to the field of display technology and are used to solve the problem that the actual size of the same sub-pattern in the upper thin film pattern is inconsistent due to the level difference of the lower layer film. The exposure method includes: acquiring a preset mask pattern, the hollowed-out area of ​​the mask pattern corresponding to the position of the area to be exposed on the film layer to be exposed; acquiring the thickness distribution data of the film layer to be exposed in the area to be exposed, and According to the thickness distribution data, the area to be exposed is divided into at least two exposure adjustment sub-areas respectively corresponding to different thickness ranges; the thickness range corresponding to the sub-area is adjusted according to the exposure amount, and the exposure amount matching the thickness range is obtained; according to different The exposure amount is used to expose each exposure amount adjustment sub-area in the area to be exposed, and a thin film pattern matching the mask pattern is formed on the film layer to be exposed.

Description

technical field [0001] The invention relates to the field of display technology, in particular to an exposure method and a method for making a film pattern. Background technique [0002] TFT-LCD (Thin Film Transistor Liquid Crystal Display, Thin Film Transistor-Liquid Crystal Display) and OLED (Organic Light Emitting Diode, Organic Light Emitting Diode) displays are increasingly being used in high-performance display fields. [0003] The various displays mentioned above have a substrate formed by stacking multiple film layers, such as an array substrate. Most film layers need to form various thin film patterns through a patterning process such as a photolithography (Mask) process. However, in the prior art, during the fabrication process, due to the layer difference of the film layer previously formed on the substrate, the thickness of the photoresist coated in this patterning process is not uniform. In this way, after the above-mentioned Mask process, the predetermined si...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20
CPCG03F7/2008G03F7/70825
Inventor 贺芳黎午升
Owner BOE TECH GRP CO LTD
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