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Carrier storage enhancement type super-junction IGBT

A technology of carrier storage and trench gate, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as unobstructed, prone to breakdown, affecting device reliability, etc.

Active Publication Date: 2018-08-10
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the n-region introduced in the blocking state is prone to breakdown, and the holes are always blocked from entering the p-type base region from the p-pillar, which will affect the reliability of the device

Method used

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  • Carrier storage enhancement type super-junction IGBT
  • Carrier storage enhancement type super-junction IGBT
  • Carrier storage enhancement type super-junction IGBT

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0057] The present invention will be described in detail below in conjunction with the accompanying drawings.

[0058] figure 1 (a) is a schematic diagram of the structure of a common semi-superjunction IGBT. Compared with the super-junction IGBT, the semi-super-junction IGBT has one more between the n-pillar (n-pillar area 31) and the p-pillar (p-pillar area 32) and the n-type buffer zone (n-buffer area 20) for An n-type auxiliary layer (n-assist layer 30) that bears part of the applied voltage, wherein the doping concentration of the n-type auxiliary layer (n-assist layer 30) may be lower than or equal to the doping concentration of the n region (n-pillar region 31) concentration. When a voltage exceeding the threshold voltage is applied to the gate (G), an electronic channel is formed near the interface between the base region (p-b1 region 41) and the gate dielectric (48); if a voltage exceeding 0.7V is applied to the collector (C) The positive voltage, electrons pass t...

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Abstract

The invention provides a super-junction IGBT (insulated gate bipolar transistor) device. According to the invention, a carrier storage layer of a first conductivity type is arranged between a pressure-resistant layer and a base region, and an element cell is further internally integrated with a MISFET (Metal Insulator Semiconductor Field Effect Transistor) of a second conductivity type. The grid of at least one MISFET is connected to an emitter. The MISFET is cut off under a small forward turn-on voltage, so that the turn-on voltage drop is reduced. The MISFET provides an access for carriers of the second conductivity type when the forward turn-on voltage is slightly higher or the forward turn-on voltage is blocked. Therefore, the carrier storage layer is prevented from bearing a high electric field, so that the reliability is improved.

Description

technical field [0001] The invention belongs to semiconductor devices, especially semiconductor power devices. Background technique [0002] Superjunction (SJ) is a voltage-resistant structure in which n-columns / p-columns are alternately arranged, which enables n-columns and p-columns to obtain a higher breakdown voltage at a higher doping concentration. When the super junction is applied to an insulated gate bipolar transistor (InsulatedGate Bipolar Transistor, IGBT) (that is, a super junction IGBT), the n-column / p-column junction will be depleted rapidly during the turn-off process, which will increase the turn-off speed (or shutdown power reduction). However, in an ordinary super-junction IGBT, the holes injected from the p-type collector region to the n-column are easily collected by the p-column and enter the p-type base region, so the minority carriers in the body (especially at the top of the withstand voltage region) The storage effect is weak, and the conduction v...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06
CPCH01L29/0634H01L29/7397H01L29/407H01L29/0696H01L29/1095H01L29/0623H01L29/7394
Inventor 黄铭敏
Owner SICHUAN UNIV