High-voltage metal oxide semiconductor transistor element
An oxide semiconductor and transistor technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as substrate current rise, burnout, inability to meet high operating voltage, etc., achieve high voltage operation, and improve the Krk effect. Effect
Active Publication Date: 2018-08-10
UNITED MICROELECTRONICS CORP
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Problems solved by technology
However, when the gate voltage is too high, the general LDMOS transistor element is still prone to the Kirk-effect (Kirk-effect), which leads to an increase in the substrate current, so that the phenomenon of burning out (burned out) occurs under higher voltage operation, and cannot meet the needs of high operating voltage
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Embodiment Construction
[0050] see figure 1 . figure 1 It is a schematic diagram of a high-voltage metal-oxide-semiconductor transistor device according to the first embodiment of the present invention. like figure 1 As shown, the present embodiment provides a high voltage metal oxide semiconductor transistor device 101, including a semiconductor substrate 10, a gate structure GS, a first drift region 12A, a first isolation structure 13A, a drain region 17A and a The first gate structure S1. The semiconductor substrate 10 of this embodiment may include a silicon substrate, an epitaxial silicon substrate, a silicon germanium substrate, a silicon carbide substrate or a silicon-covered insulation (silicon- on-insulator, SOI) substrate, etc., but not limited thereto. In addition, a well region 11 such as an N-type well region or a P-type well region can be formed in the semiconductor substrate 10 . The gate structure GS and the first gate structure S1 are disposed on the semiconductor substrate 10 ,...
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The invention discloses a high-voltage metal oxide semiconductor transistor element, which comprises a semiconductor substrate, a gate structure, a first drift region, a first isolation structure, a drain region and a first gate structure. The gate structure and the first gate structure are arranged on the semiconductor substrate and are separated mutually; the first drift region is arranged in the semiconductor substrate and at one side of the gate structure; the first isolation structure and the drain region are arranged in the first drift region; the drain region is separated from the firstisolation structure, and a part of the first drift region is arranged between the drain region and the first isolation structure; the first gate structure is at least partially arranged on the firstdrift region between the drain region and the first isolation structure; and the first gate structure is electrically with the drain region.
Description
technical field [0001] The invention relates to a high-voltage metal-oxide-semiconductor transistor element, in particular to a high-voltage metal-oxide-semiconductor transistor element with a sub-gate structure. Background technique [0002] Among power devices with high-voltage handling capability, double-diffused metal-oxide-semiconductor (double-diffused MOS, DMOS) transistor devices continue to receive attention. Common DMOS transistor devices include vertical double-diffused MOS (VDMOS) and lateral double-diffused MOS (LDMOS) transistor devices. LDMOS transistor elements have been widely used in high-voltage operating environments, such as central processing unit power supply (CPUpower supply), Power management system (power management system), DC / AC converter (AC / DC converter), high power or high frequency power amplifier, etc. The main feature of the LDMOS transistor element is to ease the high voltage between the source terminal and the drain terminal by setting a...
Claims
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IPC IPC(8): H01L29/78H01L29/423
CPCH01L29/42356H01L29/7816H01L29/402H01L29/42364H01L29/4238H01L29/7833H01L29/7835H01L29/0653H01L29/404
Inventor 萧世楹陈宣凯郑敦仁
Owner UNITED MICROELECTRONICS CORP