Dual inverse impedance type submodule, control method and modular multi-level converter

A modular multi-level, control method technology, applied in the direction of electrical components, output power conversion devices, etc., can solve the problem of poor blocking ability of DC current faults, achieve enhanced ride-through ability, the number of components and additional loss optimization, cost reduction effect

Inactive Publication Date: 2018-08-10
CHINA ELECTRIC POWER RES INST +4
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to overcome the defect of poor DC current fault blocking ability of the half-bridge sub-module in the prior art, the present invention provides a double-reverse-resistance type sub-module, a control method and a modular multilevel converter, a double-reverse-resistance type The sub-module includes a first reverse-resistance unit, a second reverse-resistance unit, a clamping diode D3 and a clamping diode D4. The double-reverse-resistance sub-module has a simple structure and has the ability to block DC current faults, and does not need to Isolation function and more additional investment, reducing costs

Method used

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  • Dual inverse impedance type submodule, control method and modular multi-level converter
  • Dual inverse impedance type submodule, control method and modular multi-level converter
  • Dual inverse impedance type submodule, control method and modular multi-level converter

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Experimental program
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Effect test

Embodiment 1

[0043] Embodiment 1 of the present invention provides a dual-resistance type sub-module, the structure diagram of which is as follows figure 1 as shown, figure 1 In A, B, C represent the first port, the second port and the third port of the first anti-resistance type unit, D, E, F respectively represent the first port, the second port and the third port of the second anti-resistance type unit Three ports, M and N represent the common point, specifically including the first anti-resistance type unit, the second anti-resistance type unit, the clamping diode D3 and the clamping diode D4; specifically, the first port of the first anti-resistance type unit A. The second port B and the third port C are respectively connected to the cathode of the clamping diode D4, the first port D of the second reverse resistance type unit and the common point M; the second port E of the second reverse resistance type unit is connected to the clamp The anode of the diode D3 and the third port F of...

Embodiment 2

[0053] Embodiment 2 of the present invention provides a control method for dual-reverse-resistance-type sub-modules. When the modular multilevel converter including the dual-reverse-resistance-type sub-modules is in the normal mode, the control method includes:

[0054] State 11): IGBT1 and IGBT2 are turned on and RB-IGBT1, RB-IGBT2, RB-IGBT3 and RB-IGBT4 are turned off, and the output voltage of the double reverse resistance sub-module is +2u c , u c Indicates the voltage of the energy storage capacitor in the first anti-resistance type unit or the second anti-resistance type unit;

[0055] State 12): IGBT1, RB-IGBT3 and RB-IGBT4 are on and RB-IGBT1, RB-IGBT2 and IGBT2 are off, or RB-IGBT1, RB-IGBT2 and IGBT2 are on and IGBT1, RB-IGBT3 and RB-IGBT4 turn off, the output voltage of the double reverse resistance sub-module is +u c ;

[0056] State 13): RB-IGBT1, RB-IGBT2, RB-IGBT3 and RB-IGBT4 are turned on and IGBT1 and IGBT2 are turned off, and the output voltage of the dou...

Embodiment 3

[0061] Embodiment 3 of the present invention provides a control method for a dual-reverse-resistance type sub-module. When the modular multilevel converter including the dual-resistance-resistance type sub-module is in a blocking mode, the control method includes:

[0062] State 21): IGBT1, IGBT2, RB-IGBT1, RB-IGBT2, RB-IGBT3 and RB-IGBT4 are all off, and the current flow direction is from common point M to common point N (current flow direction is from common point M to common point N schematic diagram Such as figure 2 As shown), the output voltage of the double reverse resistance sub-module is +2u c , u c Indicates the voltage of the energy storage capacitor in the first anti-resistance type unit or the second anti-resistance type unit;

[0063] The current path is: common point M→diode D1→energy storage capacitor C1→energy storage capacitor C2→diode D2→common point N;

[0064] State 22): IGBT1, IGBT2, RB-IGBT1, RB-IGBT2, RB-IGBT3 and RB-IGBT4 are all off, and the curren...

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Abstract

The invention provides a dual inverse impedance type submodule, a control method and a modular multi-level converter. The dual inverse impedance type submodule comprises a first inverse impedance typeunit, a second inverse impedance type unit, a clamping diode D3 and a clamping diode D4. The dual inverse impedance type submodule is simple in structure, and can block direct-current fault current,improve the passing-through capacity in case of a fault of a direct current power grid and improve the operation reliability of the direct current power grid; on the premise of an equal output level number, the direct-current fault current block capacity and the clearing speed are equivalent to the direct-current fault current block capacity and the clearing speed of a full-bridge type submodule;and furthermore, the number of used instruments and the additional loss are less than the number of used instruments and the additional loss of a clamping dual module, so that no extra investment is required for a fault isolation function, and the cost is reduced. According to the dual inverse impedance type submodule disclosed by the invention, states of all instruments of the dual inverse impedance type submodule under a normal mode and a closed mode are analyzed, and output voltages of the dual inverse impedance type submodule in different states are provided; and the dual inverse impedancetype submodule can directly adopt modulation and control strategies of a half-bridge type submodule, and a control process is simple and easy to realize.

Description

technical field [0001] The invention relates to the technical field of direct current transmission, in particular to a double-reverse resistance type sub-module, a control method and a modular multilevel converter. Background technique [0002] A half bridge sub-module (HBSM) is currently the main sub-module structure used in a modular multilevel converter (MMC) due to its low loss and low cost. When a fault occurs on the DC side of the MMC, especially a bipolar short-circuit fault, in the direction of positive current, the capacitor of the sub-module is charged, and the MMC can provide a reverse electromotive force to block the fault current, but in the direction of negative current, the lower bridge arm The IGBT anti-parallel diode can provide a path for the fault current. At this time, the system does not have the fault current blocking capability, and the short-circuit fault current cannot be cut off by blocking the IGBT, which seriously endangers the safety of the syste...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/32
CPCH02M1/32
Inventor 庄俊杨波杨晓梅姚良忠邱宇峰陶以彬曲小慧李琰李官军孔明王志冰曹远志周晨谢立军余豪杰胡安平刘欢桑丙玉崔红芬鄢盛驰李跃龙卢俊峰
Owner CHINA ELECTRIC POWER RES INST
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