A gallium nitride power device and a manufacturing method thereof

Abstract

The invention provides a gallium nitride power device and a manufacturing method thereof. The gallium nitride power device includes a substrate and multiple power device units, the multiple power device units are installed on the substrate; the power device unit has a grid, a source electrode and a drain electrode; the grid includes a first sub-child grid and a second child grid which are paralleland relatively installed, a curved surface child grid is connected with the first child grid and the second child grid; the first child grid has a first end, the second child grid has a second end relatively installed to the first end; the curved surface child grid is connected with the first end and the second end; the drain electrode is located between the first child grid and the second childgrid, and the width of the curved surface child grid is higher than the width of the first child grid and the second child grid. By changing the structure of the grid and installing the curved surfacechild grid the width of which is larger than the width of the first child grid and the second child grid, the overpressure resistant capability of the curved surface part of the grid is increased, and the hard tolerance breakdown capability of the curved surface part of the gallium nitride power device grid is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, and more specifically, to a gallium nitride power device and a manufacturing method thereof. Background technique [0002] Integrated power devices and intelligent control units, and intelligent power chip technology based on system-on-chip solutions have become the best choice for future power systems. However, the efficiency, switching speed, and maximum operating temperature of ordinary silicon power devices have been unable to be further effectively improved, making gallium nitride, a wide bandgap semiconductor, an ideal substitute material for power devices. Compared with general power devices, GaN power devices have the advantages of higher switching speed, higher blocking voltage, lower conduction loss, and higher operating temperature. [0003] refer to figure 1 , figure 1 It is a schematic structural diagram of a common gallium nitride power device in the prior art, and ...

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Problems solved by technology

[0004] Depend on figure 1 It can be seen from the GaN power device shown that in the existing GaN power device, the electric field distribution of the curved surface part (gate tail) of the gate 11 is more concentrated than the straight part of the gate G, and the electric field intensity is relatively large, so that The gate G of the curved surface is prone to hard breakdown

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