High-frequency low-insertion-loss switch

Abstract

The invention provides a high-frequency low-insertion-loss switch, and belongs to the field of communication technology. The high-frequency low-insertion-loss switch comprises a transformer type differential inductor, a transformer type Balun, a capacitor, an NMOS (N-channel Metal Oxide Semiconductor) transistor and a transformer type differential inductor T-L1, wherein the transformer type differential Balun includes a transformer type Balun BA, a transformer type Balun BT and a transformer type Balun BR; and the capacitor includes a capacitor C, a capacitor CA, a capacitor CT and a capacitorCR, an NMOS transistor M1 and an NMOS transistor M2. Through adoption of the high-frequency low-insertion-loss switch, the deterioration of insertion loss caused by substrate leakage loss of a traditional radiofrequency switch at a high frequency can be relieved effectively. A differential switching structure overcomes the parasitic inductance effect of a grounding key and wire. The transformer type differential inductor improves the low quality factor of an on-chip inductor, and more importantly, the chip area occupied by the inductor is reduced.

Description

technical field [0001] The invention belongs to the technical field of communication, in particular to a high frequency low insertion loss switch. Background technique [0002] The RF switch is one of the key modules of the radar and communication system. It can be used to switch the receiving and transmitting functions of the system. As the requirements for the cost and integration of the RF system are getting higher and higher, all modules of the RF transceiver system are integrated with CMOS technology. Integration on the same silicon wafer has always been a research hotspot at home and abroad. With the evolution of CMOS technology, it is becoming a strong competitor of traditional GaAs technology in RF front-end applications, especially in the full integration of RF circuits, analog circuits and digital circuits, it has advantages that GaAS technology cannot achieve. [0003] At present, power amplifiers and RF switches are required to have high power handling capacity,...

AI Technical Summary

Problems solved by technology

[0008] However, as the frequency increases and the power increases, the isolation effect of the NMOS transistor DNW produced by the Triple-Well CMOS process becomes smaller and smaller, and the influence of the conductivity of the substrate will become more and more obvious. Reducing the size of the transistor can satisfy Transistors expand to higher frequency applications, but with limitations on power performance

Images