Fenton-assisted three-phase flowing pressure cavitation polishing SiC optimal curved surface method and device

A three-phase flow, Fenton technology, used in optical surface grinders, grinding/polishing equipment, surface polishing machine tools, etc., can solve problems such as damage, improve polishing efficiency, improve recycling efficiency, and improve polishing efficiency. Effect

Active Publication Date: 2018-09-28
ZHEJIANG UNIV OF TECH
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Problems solved by technology

[0009] In order to overcome the shortcomings of existing surface and subsurface damages when polishing SiC workpieces, the present invention proposes a Fenton-assisted three-phase fl

Method used

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  • Fenton-assisted three-phase flowing pressure cavitation polishing SiC optimal curved surface method and device
  • Fenton-assisted three-phase flowing pressure cavitation polishing SiC optimal curved surface method and device

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Embodiment Construction

[0025] The present invention will be further described below in conjunction with the accompanying drawings.

[0026] refer to figure 1 with figure 2 , a Fenton-assisted three-phase flow pressure cavitation polishing method for SiC optical curved surfaces, first wrapping the part of the SiC workpiece that does not need to be processed with an insulating material, and then immersing the SiC workpiece in a reaction pool filled with Fenton reagent. The strong oxidizing hydroxyl radicals generated in the Fenton reaction oxidize the surface of the SiC workpiece into SiO with softer hardness and lower binding force. 2 . After reacting for a period of time, the workpiece is taken out and fixed in the polishing liquid container with a clamp. The series-parallel polishing platform controls the posture of the cylindrical polishing tool relative to the workpiece, so that the polishing tool and the workpiece surface always maintain a small processing gap, and the tool and the workpiece...

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Abstract

The invention discloses a Fenton-assisted three-phase flowing pressure cavitation polishing SiC optimal curved surface method. Firstly, the parts, have no need to be machined, of SiC workpieces are wrapped by insulation materials; then, the SiC workpieces are dipped in a reaction pool with a Fenton reagent; after a period of time for reaction, the workpieces are taken out and fixed in a polishingliquid container by a fixture; a series and parallel connection polishing platform controls poses of a cylindrical polishing tool relative to the workpieces, so that a tiny machining gap is always kept between the polishing tool and the surfaces of the workpieces; the tool and the workpieces are totally dipped in the polishing liquid; a servo motor drives the cylindrical polishing tool to rotate at high speed; an ultrasonic bubble generation mechanism continuously adjusts poses of an amplitude change rod relative to a dynamic pressure area; and along with polishing, an abrasive particle current circulating system circularly conveys abrasive particles in a polishing container. The invention further provides a Fenton-assisted three-phase flowing pressure cavitation polishing SiC optimal curved surface. The method improves the polishing efficiency under the precondition of not generating the surface and subsurface damage.

Description

technical field [0001] The invention relates to the technical field of ultra-precision machining, and provides a Fenton-assisted three-phase flow pressure cavitation polishing method and device for SiC optical curved surfaces. Background technique [0002] With the development of science and technology, the electronic information manufacturing industry has become a basic and strategic industry of the country. At the same time, the technical level and development scale of this industry have also become one of the symbols of the country's technological innovation level and comprehensive national strength. The manufacture of optoelectronics and microelectronics is the current core content of the electronic information manufacturing industry. The development of microelectronics and optoelectronics technology makes the performance requirements of electronic devices higher and higher. As a third-generation semiconductor material, SiC has many significant advantages compared with ...

Claims

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Application Information

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IPC IPC(8): B24B31/116B24B31/12B24B1/04B24B57/02B24B13/00
CPCB24B1/04B24B13/00B24B31/116B24B31/12B24B57/02
Inventor 赵军郑启明计时鸣
Owner ZHEJIANG UNIV OF TECH
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