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Microwave plasma chemical vapor deposition device and leakage point detection method

A technology of microwave plasma and chemical vapor deposition, applied in chemical instruments and methods, from chemically reactive gases, gaseous chemical plating, etc., can solve problems such as easy corrosion, and achieve the effect of solving leakage and providing quality

Inactive Publication Date: 2018-09-28
FD3M公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Because MPCVD equipment involves high temperature, easy corrosion and other difficulties, the vacuum degree and cleanliness of the equipment in the market have certain limitations.

Method used

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  • Microwave plasma chemical vapor deposition device and leakage point detection method
  • Microwave plasma chemical vapor deposition device and leakage point detection method
  • Microwave plasma chemical vapor deposition device and leakage point detection method

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Embodiment Construction

[0035] The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0036] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, ...

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Abstract

The present invention discloses a microwave plasma chemical vapor deposition apparatus, comprising: a resonant cavity; a deposition stage disposed in the resonant cavity, and including a substrate anda cooling device for cooling the substrate, wherein the cooling device includes a cooling water circuit, and the cooling water A VCR connector is provided on the circuit. The present invention also discloses an extremely high vacuum control method, comprising the steps: establishing a static pressure lift curve of a vacuum chamber, wherein the abscissa is time, the ordinate is pressure; controlling the starting point of the curve to be less than 1.0*10<-11>Pa; the slope of the curve tangent to be less than 1.0*10<-8>pa / min; the total leak rate of the vacuum chamber to be less than 10<-8>Pa. l / s. The invention can effectively solve the leakage of the microwave plasma chemical vapor deposition device, and can obviously provide the quality of the diamond production.

Description

technical field [0001] The application belongs to the technical field of single crystal diamond growth, and in particular relates to a microwave plasma chemical vapor deposition device and a leakage detection method. Background technique [0002] Diamond has excellent physical and chemical properties, and has broad application prospects in many fields of industry and civil use. At present, the methods of artificially synthesizing diamond include high temperature and high pressure method (HTHP), direct current arc plasma jet method (DCAPJ), hot wire chemical vapor deposition method (HFCVD), microwave plasma chemical vapor deposition method (MPCVD), among which MPCVD is the preparation of high The preferred method for quality diamonds. This is due to a series of advantages such as good controllability of microwave excited plasma, high plasma density, and no electrode pollution. [0003] The vacuum system is classified according to its working pressure, which can be divided i...

Claims

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Application Information

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IPC IPC(8): C30B25/16C30B29/04C23C16/27C23C16/44C23C16/517C23C16/511C23C16/513C23C16/52
CPCC23C16/274C23C16/276C23C16/4411C23C16/52C30B25/16C30B29/04
Inventor 马懿马修·L·斯卡林朱金华吴建新缪勇卢荻艾永干克里斯托弗·E·格里芬
Owner FD3M公司
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