Enhanced GaN transistor and preparation method thereof

Abstract

The invention discloses an enhanced GaN transistor and a preparation method thereof. The transistor comprises a substrate, wherein the substrate comprises a source region and a drain region, and a gate region located between the source region and the drain region; a GaN modulation gate located at the gate region, wherein the GaN modulation gate comprises a GaN material doped with P-type ions; a source electrode and a drain electrode, wherein the source electrode is located at the source region and the drain electrode is located at the drain region; and a gate metal layer, which is located on the surface, away from the substrate, of the GaN modulation gate, wherein the grid electrode metal layer at least comprises a lanthanide metal layer, and the lanthanide metal layer is in contact with the GaN modulation grid. According to the enhanced GaN transistor provided by the embodiment of the invention, the lanthanide metal layer is arranged on one side, far away from the substrate, of the GaN modulation grid, and the lanthanide metal layer is enabled to be in contact with the GaN modulation gate; and when the enhanced GaN transistor works, a higher voltage is required to conduct a channel between the source electrode and the drain electrode, thereby improving the gate threshold voltage of the enhanced GaN transistor and reducing the gate leakage current.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of preparation of broadband power devices, and in particular to an enhancement mode gallium nitride transistor and a preparation method thereof. Background technique [0002] Gallium nitride is a semiconductor material with the characteristics of large band gap, high electron saturation drift velocity, high breakdown field strength and good thermal conductivity, and has become an important third-generation semiconductor material. In the field of electronic devices, compared with silicon materials, gallium nitride materials are more suitable for manufacturing high-temperature, high-frequency, high-voltage and high-power devices, and have good application prospects. [0003] In order to obtain high-temperature, high-frequency, high-voltage and high-power gallium nitride devices, it is first necessary to prepare gallium nitride high electron mobility transistors (Gallium Nitride High Elect...

AI Technical Summary

Problems solved by technology

One is to etch the gate trench to reduce the two-dimensional electron gas density in the conductive channel by reducing the thickness of the barrier layer, but this method will introduce additional etching damage, and this method can only reduce the gallium nitride The threshold voltage of the device is raised to around 1V

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