Enhanced GaN transistor and preparation method thereof
A gallium nitride and transistor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as etching damage, and achieve the effect of increasing gate threshold voltage and reducing gate leakage current
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0039] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention. In addition, it should be noted that, for the convenience of description, only some structures related to the present invention are shown in the drawings but not all structures.
[0040] figure 1 It is a schematic structural diagram of an enhancement mode gallium nitride transistor provided by an embodiment of the present invention. Optionally, refer to figure 1 , the enhancement mode gallium nitride transistor includes: a substrate 100, the substrate 100 includes a source region and a drain region, and a gate region between the source region and the drain region; a gallium nitride modulation gate 101 is located in the gate region, and the gallium nitride modulation The gate 101 includes ...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com