Longitudinally-conductive GaN (gallium nitride)-substrate MISFET (metal insulated semiconductor field-effect transistor) device and manufacturing method thereof

A conduction and vertical technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as the reduction of two-dimensional electron gas concentration, the impact of device conduction performance, and the reduction of channel mobility, so as to improve Reliability and repeatability, reduced on-resistance, effect of low on-resistance

Active Publication Date: 2012-10-03
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] According to the latest research results, the vertical conduction structure MISFET based on AlGaN / GaN heterojunction and insulated gate structure can achieve low on-resistance, high voltage, large conduction current and other characteristics, while the P-type current blocking layer technology has a significant effect on reducing the quality of the upper GaN lattice, which will lead to a decrease in channel mobility and thus affect device performance. There is a depletion effect, which reduces the concentration of two-dimensional electron gas and further affects the conduction performance of the device

Method used

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  • Longitudinally-conductive GaN (gallium nitride)-substrate MISFET (metal insulated semiconductor field-effect transistor) device and manufacturing method thereof
  • Longitudinally-conductive GaN (gallium nitride)-substrate MISFET (metal insulated semiconductor field-effect transistor) device and manufacturing method thereof
  • Longitudinally-conductive GaN (gallium nitride)-substrate MISFET (metal insulated semiconductor field-effect transistor) device and manufacturing method thereof

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Embodiment 1

[0040] Such as Figure 11 Shown is a schematic diagram of the device structure of this embodiment, including a gate 10, a source 8, a drain 9, an insulating layer 7, a conductive GaN substrate 1 and an epitaxial layer thereon, and the epitaxial layer includes a first n-type light Doped GaN layer 2, secondary growth mask dielectric layer 3, non-doped GaN layer 4 and heterostructure barrier layer 5, the middle part of the non-doped GaN layer 4 forms a groove for realizing gate conduction The surface of the channel 12, the grooved channel 12 and the heterostructure barrier layer 5 is covered with an insulating layer 7, the gate 10 is covered at the grooved channel 12 on the insulating layer, and the two ends of the insulating layer 7 are etched to form a source region , ohmic metal is evaporated on the source region to form the source 8 in contact with the heterostructure barrier layer 5, and the drain 9 is placed on the back of the conductive GaN substrate.

[0041] The fabrica...

Embodiment 2

[0053] Such as Figure 14 It is a schematic diagram of the device structure of this embodiment, which is similar to that of Embodiment 1, except that after the secondary growth mask dielectric layer 3 is etched, a P-type GaN layer 11 is first grown in the groove area until When the growth is close to the height of the insulating dielectric mask layer on both sides, such as Figure 12 As shown, the growth conditions are switched immediately to grow the non-doped GaN layer 4, as shown in Figure 13 shown. This will effectively improve the conduction voltage of the vertical channel and increase the threshold voltage of the entire device.

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Abstract

The invention relates to a longitudinally-conductive GaN (gallium nitride)-substrate MISFET (metal insulated semiconductor field-effect transistor) device which comprises a grid electrode, a source electrode, a drain electrode, an insulation layer, a conductive GaN substrate and an epitaxial layer formed on the conductive GaN substrate. The epitaxial layer sequentially includes a first n-shaped light-doped GaN layer, a secondary growth masking media layer, a non-doped GaN layer and a heterogeneous-media potential barrier layer from bottom to top. A groove channel is formed in the middle of the epitaxial layer, the insulation layer is covered on the surface of the groove channel and the heterogeneous-media potential barrier layer, and the grid electrode is covered on the groove channel on the insulation layer. Source electrode areas are formed at two ends of an etching insulation layer, ohm metals are evaporated in the source electrode areas and form the source electrodes contacting with the heterogeneous-media potential barrier layer, and the drain electrode is disposed on the back of the conductive GaN substrate. In the manufacturing method, the insulated media masking layer is directly used as a current baffle layer, a high-quality low-conduction resistance access area is formed in the grate electrode etching area by the side extension technology, and the longitudinally-conductive GaN MISFET device which is stable is obtained.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a vertically conducting GaN-based MISFET device and a manufacturing method thereof. Background technique [0002] The third-generation wide-bandgap semiconductor materials represented by GaN have excellent material performance characteristics such as wide bandgap, high breakdown electric field strength, high saturation electron drift velocity, high thermal conductivity, and high concentration of two-dimensional electron gas at the heterogeneous interface. Compared with Si materials, GaN is more suitable for making power electronic devices with high power, high capacity and high switching speed. Compared with traditional Si devices, GaN devices can carry higher power density and have higher energy conversion efficiency, which can reduce the volume and weight of the entire system, thereby reducing system cost. [0003] At present, from the perspective of the device structure r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L29/06H01L21/335
Inventor 刘扬倪毅强张佰君
Owner SUN YAT SEN UNIV
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