Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Nitride semiconductor white light light-emitting diode

A technology of nitride semiconductors and light-emitting diodes, which is applied in semiconductor devices, electrical components, nanotechnology, etc., can solve problems such as high cost and difficult control, and achieve the effect of uniform spacing, pure chroma, and improved purity

Active Publication Date: 2018-09-28
LIMING VOCATIONAL UNIV
View PDF4 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Generally, red, green, blue, RGB, and white light-emitting diodes use GaAs red light-emitting diodes to cooperate with InGaN blue light-emitting diodes and green light-emitting diodes, but this method has problems such as difficult control and high cost, and requires multiple chips to be combined

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nitride semiconductor white light light-emitting diode
  • Nitride semiconductor white light light-emitting diode
  • Nitride semiconductor white light light-emitting diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] The invention discloses a nitride semiconductor white light-emitting diode, which sequentially includes a substrate 100, a buffer layer 101, a dislocation line 102, a nanometer dislocation filtering template layer 103, a first conductivity type semiconductor 104, multiple quantum wells 105, and V-pits. 106. Second conductivity type semiconductor 107, WS 2 / MoS 2 Superlattice two-dimensional material 108 and GaS / InSe superlattice two-dimensional material 109, dislocation lines 102 include blocked and filtered dislocation lines 102a and upwardly extending dislocation lines 102b, V-pits 106 include the first V- The pits 106a and the second V-pits 106b also include multiple quantum wells between the first V-pits and the second V-pits, such as figure 2 As shown, after the V-pits 106 pass through the nano-dislocation filtering template 103 to filter the blocked and filtered dislocation lines 102a, only a small amount of upwardly extending dislocation lines 102b remain, ther...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a nitride semiconductor white light light-emitting diode. V-pits are filtered and dislocated through a nanometer dislocation filtering template to form uniformly distributed V-pits in a multi-quantum-well region; the V-pits comprise first V-pits and second V-pits; the multiple quantum wells between the first V-pits and the second V-pits give out blue light; a WS<2> / MoS<2> superlattice two-dimensional material is in the opening positions of the first V-pits to give out red light; a GaS / InSe superlattice two-dimensional material is in the opening positions of the second V-pits to give out green light; and the red light, green light and blue light are mixed to form white light, so that cost is lowered and the light emitting efficiency is improved.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to a nitride semiconductor white light emitting diode. Background technique [0002] Nitride semiconductor light-emitting diodes have a wide range of adjustable wavelengths, high luminous efficiency, energy saving and environmental protection, long service life of more than 100,000 hours, small size, and strong designability. They have gradually replaced incandescent and fluorescent lamps and are growing. The light source for ordinary household lighting, and widely used in new scenarios, such as indoor high-resolution display screens, outdoor display screens, mobile phone TV backlighting, street lights, car lights, flashlights and other applications. However, the material growth quality of nitrides with high In composition is poor, resulting in low luminous efficiency, and it is difficult to form red nitride light emitting diodes. Usually white light-emitting dio...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/02H01L33/06H01L33/08H01L33/26B82Y40/00
CPCB82Y40/00H01L33/025H01L33/06H01L33/08H01L33/26
Inventor 王星河
Owner LIMING VOCATIONAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com