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Preparation method of silicon carbon negative electrode material and porous silicon carbon microsphere negative electrode material

A negative electrode material and carbon microsphere technology, which is applied in the field of silicon carbon negative electrode material preparation and porous silicon carbon microsphere negative electrode material, can solve the problems affecting the high capacity of silicon-based materials and the easy pulverization of negative electrode powder.

Active Publication Date: 2021-03-09
NORTHERN ALTAIR NANOTECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the high expansion rate of silicon-based materials makes the negative electrode powder very easy to pulverize, which affects the high capacity of silicon-based materials.

Method used

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  • Preparation method of silicon carbon negative electrode material and porous silicon carbon microsphere negative electrode material
  • Preparation method of silicon carbon negative electrode material and porous silicon carbon microsphere negative electrode material
  • Preparation method of silicon carbon negative electrode material and porous silicon carbon microsphere negative electrode material

Examples

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no. 1 example

[0064] see figure 1 , this embodiment provides a method for preparing a silicon-carbon microsphere anode material, which is used to prepare a porous silicon-carbon microsphere anode material. The method can prepare porous silicon-carbon microspheres with high gram capacity, and the porous silicon-carbon microspheres have a high capacity retention rate after multiple cycles.

[0065] In this embodiment, the steps of the method for preparing the silicon-carbon negative electrode material are as follows:

[0066] S101. Grinding the silicon powder slurry to obtain a ground silicon powder slurry.

[0067] Wherein, step S101 includes: performing wet ball milling on the silicon powder slurry in a circulating closed ball mill, and grinding for 4 hours to obtain the ground silicon powder slurry. In addition, the ground silicon powder slurry obtained by wet ball milling includes nano-silicon powder, and the particle size of the nano-silicon powder is less than or equal to 20 nm. That...

no. 2 example

[0115] see Image 6 , a method for preparing a silicon-carbon negative electrode material is provided in this example, which is used to prepare a porous silicon-carbon microsphere negative electrode material. The porous silicon-carbon microsphere negative electrode material prepared by the silicon-carbon negative electrode material preparation method provided in this example is The gram capacity is high, and the capacity retention rate is high after multiple charge-discharge cycles.

[0116] The steps of the method for preparing the silicon-carbon anode material provided in this example are as follows:

[0117] S201. Put nano silicon powder and artificial graphite into 10% sucrose aqueous solution to obtain a first mixed solution.

[0118] Wherein, in this embodiment, the nano-silicon powder is purchased directly, and the amount of the nano-silicon powder is 30 g. The amount of artificial graphite taken is 300g. It should be understood that in other embodiments, the amount ...

no. 3 example

[0129] This embodiment provides a porous silicon carbon microsphere negative electrode material, which has a high gram capacity and a high capacity retention rate after multiple cycles.

[0130] Wherein, the porous silicon-carbon microsphere anode material provided in this embodiment is made by the preparation method of the silicon-carbon anode material provided in the first embodiment.

[0131] see Figure 8 The gram capacity of the porous silicon-carbon microsphere negative electrode material provided in this example can reach 600mAh / g, the first charge-discharge rate can reach 92%, and the capacity retention rate after many cycles is above 90%.

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Abstract

The invention discloses a silicon carbon negative electrode material preparation method and a porous silicon carbon microsphere negative electrode material, which relate to the technical field of battery manufacturing. The silicon carbon negative electrode material preparation method comprises the following steps: grinding silicon powder slurry to obtain ground silicon powder slurry; performing graphitization treatment for carbon micro powder to obtain graphitized carbon micro powder; stirring the ground silicon powder slurry, continuously adding the graphitized carbon micro powder in the ground silicon powder slurry in a stirring process, adding coated carbon source, and performing ultrasonic treatment, stirring at the same time, and then performing spray drying and obtaining silicon carbon microspheres; performing carbonization treatment for the silicon carbon microspheres and obtaining carbonized silicon carbon microspheres; performing etching treatment for the carbonized silicon carbon microspheres, then performing washing and drying for the carbonized silicon carbon microspheres, and obtaining the porous silicon carbon microsphere negative electrode material. The porous silicon carbon microsphere negative electrode material is produced through the method above. The method provided by the invention can produce the porous silicon carbon microspheres with high gram volume, and capacity retention ratio of the porous silicon carbon microspheres is high after the porous silicon carbon microspheres are circulated many times.

Description

technical field [0001] The invention relates to the technical field of battery manufacturing, in particular to a method for preparing a silicon-carbon negative electrode material and a porous silicon-carbon microsphere negative electrode material. Background technique [0002] With the wide application of electronic products, batteries with high energy density and safe performance have become the trend of the times. The theoretical gram capacity of graphite is about 375mAh / g. At present, the theoretical gram capacity of graphite can no longer meet the requirements of high energy density of batteries. High capacity The study of silicon-based materials has received extensive attention. However, the high expansion rate of silicon-based materials makes the negative electrode powder very easy to pulverize, which affects the high capacity of silicon-based materials. Contents of the invention [0003] The purpose of the present invention is to provide a method for preparing a si...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01M4/36H01M4/38H01M4/583H01M4/62H01M10/0525
CPCH01M4/362H01M4/38H01M4/583H01M4/625H01M10/0525Y02E60/10
Inventor 袁雪亚王宇航白岩成信刚马书良
Owner NORTHERN ALTAIR NANOTECH CO LTD