Method of suppressing light-and elevated temperature-induced degradation for multicrystalline silicon PERC (Passivated Emitterand Rear Cell)

A polysilicon and auxiliary light technology, applied in the field of solar cells, can solve the problems of affecting the performance of the cell, increasing the cell preparation process, and high cost, and achieving the effects of wide popularization and application value, simple process and low cost

Inactive Publication Date: 2018-10-02
ZHEJIANG NORMAL UNIVERSITY
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  • Abstract
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  • Application Information

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Problems solved by technology

However, these methods have some disadvantages, such as high cost, increased battery preparation process, affecting battery performance, etc.

Method used

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  • Method of suppressing light-and elevated temperature-induced degradation for multicrystalline silicon PERC (Passivated Emitterand Rear Cell)
  • Method of suppressing light-and elevated temperature-induced degradation for multicrystalline silicon PERC (Passivated Emitterand Rear Cell)

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Experimental program
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Embodiment Construction

[0012] The method for suppressing thermally assisted light-induced attenuation of polysilicon PERC cells described in this embodiment includes the following specific implementation steps:

[0013] 1) Prepare polysilicon PERC cells: the cells used in the experiment are commercial products purchased from the market, and the basic parameters are: size 156×156mm 2 , conversion efficiency 19.1%, open circuit voltage 0.64V, short circuit current 36.2mA / cm 2 . Cell structure includes front electrode, silicon nitride anti-reflection layer and passivation layer, phosphorus diffusion layer, p-type polysilicon, aluminum oxide passivation layer, silicon nitride protective layer, back electrode;

[0014] 2) Low-temperature annealing treatment without light: put the cells in step 1) into an ordinary annealing furnace with no light and an air atmosphere. 300°C, the annealing time is: 20min, 40min, 60min, 80min, 100min, 120min, 140min, 160min, 180min;

[0015] 3) Heat-assisted light-induce...

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Abstract

The invention discloses a method of suppressing light-and elevated temperature-induced degradation for a multicrystalline silicon PERC (Passivated Emitterand Rear Cell). The adopted cell slice structure comprises a front electrode, a silicon nitride antireflection layer, a passivation layer, a phosphorus diffusion layer, p-type polysilicon, an alumina passivation layer, a silicon nitride protective layer and a back electrode, and the cell slice is put in an ordinary annealing furnace without light and air atmosphere, the temperature of the annealing furnace is set to be 180 to 200 DEG C, and the annealing time is 3 hours. The no-light low-temperature annealing technology has the advantages that the cost is low, the process is simple, no negative influences are generated on the cell performance, and thus has wide popularization and application value in the multicrystalline silicon PERC industry.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a method for suppressing heat-assisted light-induced attenuation of polycrystalline silicon PERC cells. Background technique [0002] PERC battery (Passivated Emitter and Rear Cell) first originated in the 1980s. In 1989, the Martin Green research group of the University of New South Wales in Australia officially reported the PERC battery structure in Applied Physics Letter. At that time, it reached a laboratory battery efficiency of 22.8%. In 1999, the PERL battery researched by his laboratory set a world record of conversion efficiency of 25%. The laboratory preparation of PERC cells adopts technologies such as photolithography, evaporation, thermal oxygen passivation, and electroplating. The biggest difference between PERC batteries and conventional batteries is the passivation of the dielectric film on the back surface, and the use of local metal contacts, which greatly ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/1804Y02P70/50
Inventor 黄仕华芮哲
Owner ZHEJIANG NORMAL UNIVERSITY
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