Target blank and machining method thereof

Abstract

The invention provides a target blank and a machining method thereof. The machining method comprises the following steps that the target blank is provided, and the target blank is provided with a sputtering surface and a welding surface opposite to the sputtering surface; and the welding surface is machined, plane threads are formed on the welding surface, and the tooth shapes of the plane threadsare triangular. According to the target blank and the machining method thereof, machining is carried out on the welding surface of the target blank, the plane threads are formed on the welding surface, and the tooth shapes of the plane threads are triangular; on one hand, the roughness, the uniformity and the adhesion force of the welding surface can be increased through the plane threads; on theother hand, the tooth shapes of the plane threads are triangular, when the target blank and a back plate are welded, the plane threads can be embedded into the back plate; and therefore, the two aspects are combined, when the target blank and the back plate are welded to form a target material assembly, the welding strength between the target blank and the back plate is improved, the problem of poor welding or unsoldering between the target blank and the back plate can be effectively avoided, and then the performance of the formed target material assembly is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a target blank and a processing method thereof. Background technique [0002] Sputtering technology is one of the commonly used processes in the field of semiconductor manufacturing. With the increasing development of sputtering technology, sputtering targets play an increasingly important role in sputtering technology. The quality of sputtering targets directly affects the sputtering technology. Film quality after injection. [0003] In the field of sputtering target manufacturing, the target assembly is composed of a target blank that meets the sputtering performance and a back plate that is combined with the target blank by welding. During the sputtering process, the working environment of the target assembly is relatively harsh. For example: one side of the back plate of the target assembly is forcibly cooled by a certain pressure of cooling water, while one side ...

AI Technical Summary

Problems solved by technology

In such a harsh environment, in order to ensure the stability of the film quality and the quality of the target component, the quality of the target blank and the back plate and the welding bonding rate are increasingly demanding, otherwise it is easy to cause the target component to be heated. Deformation, cracking and other problems will occur under the conditions, which will affect the quality of film formation and even cause damage to the sputtering base

[0004] However, the performance of the prior art target assembly needs to be improved

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