Target blank and machining method thereof

A processing method and technology of target blanks, which are applied in the field of semiconductor manufacturing, can solve problems such as the performance of target components needs to be improved, damage to the sputtering base, and affect the quality of film formation, so as to achieve uniformity and adhesion, improve performance, and prevent The effect of poor soldering or desoldering

Inactive Publication Date: 2018-10-09
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In such a harsh environment, in order to ensure the stability of the film quality and the quality of the target component, the quality of the target blank and the back plate and the welding bonding rate are increasingly demanding, otherwise it is easy to cause the target co

Method used

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  • Target blank and machining method thereof
  • Target blank and machining method thereof
  • Target blank and machining method thereof

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Embodiment Construction

[0030] It can be seen from the background technology that the performance of the target assembly needs to be improved. Analyze the reasons for this:

[0031] At present, the welding of high-purity aluminum target and A6061 aluminum back plate mainly adopts hot isostatic pressing process. Specifically, a target blank is provided, and the target blank has a first welding surface and a first back surface opposite to the welding surface; a back plate is provided, and the back plate has a second welding surface, and is welded to the second welding surface. facing the second back side facing each other; the first welding surface and the second welding surface are arranged and attached to each other to form an initial target assembly; the initial target is preheated; after the preheating, 4000 A hydraulic press of more than one ton presses the first back surface and the second back surface so that the first welding surface of the target is embedded into the second welding surface of...

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Abstract

The invention provides a target blank and a machining method thereof. The machining method comprises the following steps that the target blank is provided, and the target blank is provided with a sputtering surface and a welding surface opposite to the sputtering surface; and the welding surface is machined, plane threads are formed on the welding surface, and the tooth shapes of the plane threadsare triangular. According to the target blank and the machining method thereof, machining is carried out on the welding surface of the target blank, the plane threads are formed on the welding surface, and the tooth shapes of the plane threads are triangular; on one hand, the roughness, the uniformity and the adhesion force of the welding surface can be increased through the plane threads; on theother hand, the tooth shapes of the plane threads are triangular, when the target blank and a back plate are welded, the plane threads can be embedded into the back plate; and therefore, the two aspects are combined, when the target blank and the back plate are welded to form a target material assembly, the welding strength between the target blank and the back plate is improved, the problem of poor welding or unsoldering between the target blank and the back plate can be effectively avoided, and then the performance of the formed target material assembly is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a target blank and a processing method thereof. Background technique [0002] Sputtering technology is one of the commonly used processes in the field of semiconductor manufacturing. With the increasing development of sputtering technology, sputtering targets play an increasingly important role in sputtering technology. The quality of sputtering targets directly affects the sputtering technology. Film quality after injection. [0003] In the field of sputtering target manufacturing, the target assembly is composed of a target blank that meets the sputtering performance and a back plate that is combined with the target blank by welding. During the sputtering process, the working environment of the target assembly is relatively harsh. For example: one side of the back plate of the target assembly is forcibly cooled by a certain pressure of cooling water, while one side ...

Claims

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Application Information

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IPC IPC(8): B23P15/00
CPCB23P15/00
Inventor 姚力军潘杰相原俊夫王学泽李力平
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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