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A method for preparing metal oxynitride film by using inorganic steam reaction method

A metal thin film and oxynitride technology, which is applied in the field of preparing metal oxynitride thin films, can solve the problems of low quality of metal oxynitride thin films, inability to obtain a completely covered and seamless thin film, and restricting the development of metal oxynitride thin films, etc. , to achieve the effect of improving the photoelectrochemical performance

Active Publication Date: 2020-06-30
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The quality of metal oxynitride films prepared by this method is not high, and a seamless film with complete coverage cannot be obtained, which greatly limits the application and development of metal oxynitride films.

Method used

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  • A method for preparing metal oxynitride film by using inorganic steam reaction method
  • A method for preparing metal oxynitride film by using inorganic steam reaction method
  • A method for preparing metal oxynitride film by using inorganic steam reaction method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Preparation of SrTaO 2 The N oxynitride thin film comprises the following steps: (1) cutting the tantalum metal thin film into small pieces of 10mm X 15mm size, and cleaning them in acetone, alcohol and deionized water respectively, for subsequent use; (2) weighing 0.03 moles of SrCl 2 ·6H 2 O and 0.01 mol SrCO 3 , mixed evenly and fully ground; (3) 0.2 g of the molten salt obtained in step (2) was placed on the bottom of the corundum porcelain boat; (4) 3 pieces of the metal tantalum thin film obtained in the step (1) were placed on the corundum The top of the porcelain boat; (5) place the corundum porcelain boat with the precursor placed in step (4) in an ammonia atmosphere at 900°C for 2 hours; (6) put the SrTaO prepared in step (5) 2 N (the surface of metal tantalum film is formed by in-situ reaction) metal oxynitride film is washed with water and dried.

Embodiment 2

[0022] Preparation of CaTaO 2 The N oxynitride thin film comprises the following steps: (1) cutting the tantalum metal thin film into small pieces of 10mm X 15mm size, and cleaning them in acetone, alcohol and deionized water respectively, and for subsequent use; (2) weighing 0.03 moles of CaCl 2 and 0.01 mol CaCO 3 , mixed evenly and fully ground; (3) 0.2 g of the molten salt obtained in step (2) was placed on the bottom of the corundum porcelain boat; (4) 3 pieces of the metal tantalum thin film obtained in the step (1) were placed on the corundum The top of the porcelain boat; (5) place the corundum porcelain boat with the precursor placed in step (4) in an ammonia atmosphere at 900°C for 2 hours; (6) put the CaTaO prepared in step (5) 2 The N metal oxynitride film was washed with water and dried.

Embodiment 3

[0024] Preparation of BaTaO 2 The N oxynitride thin film comprises the following steps: (1) cutting the tantalum metal thin film into small pieces of 10mm X 15mm size, and cleaning them in acetone, alcohol and deionized water respectively, for subsequent use; (2) weighing 0.03 moles of BaCl 2 and 0.01 mol BaCO 3 , mixed evenly and fully ground; (3) 0.2 g of the molten salt obtained in step (2) was placed on the bottom of the corundum porcelain boat; (4) 3 pieces of the metal tantalum thin film obtained in the step (1) were placed on the corundum The top of the porcelain boat; (5) place the corundum porcelain boat with the precursor placed in step (4) in an ammonia atmosphere at 900°C for 2 hours; (6) put the BaTaO prepared in step (5) 2 The N metal oxynitride film was washed with water and dried.

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Abstract

The invention discloses a method for preparing a metal oxynitride film by an inorganic steam reaction method. The method comprises the steps: 1) respectively grinding metal carbonate and metal haloidaccording to a mole proportion of the metal carbonate to the metal haloid to obtain Ca molten salt, Sr molten salt and Ba molten salt, wherein metal of the metal carbonate and the metal haloid is Ca and Sr or Ba and La or Pr; 2) taking 0.1g to 0.5g of molten salt in the step 1) into the bottom of a porcelain boat and putting a Ta, Ti or Nb metal film at the top of the porcelain boat; 3) putting the porcelain boat which a precursor is placed in the step (2) into the ammonia gas atmosphere, roasting for 1 hour or more under 800 to 900 DEG C, making inorganic steam volatilized under the high-temperature ammonia gas atmosphere react with the metal film and preparing the metal oxynitride film on a substrate in site.

Description

technical field [0001] The invention relates to a method for preparing a metal oxynitride thin film by using an inorganic steam reaction method Background technique [0002] Energy is the foundation and driving force of modern society. With the development of modern industry, human demand for energy is also increasing rapidly. With the continuous development of socialist modernization, the contradiction between the growing demand for energy and the limited reserves of fossil energy has become increasingly serious. At the same time, the extensive application of traditional fossil fuels has also led to a large amount of emissions of greenhouse gases and pollutants, resulting in severe environmental problems. Therefore, seeking and utilizing clean and pollution-free renewable energy is of great strategic significance to optimize the energy structure and ensure the sustainable development of the economy and society. [0003] Hydrogen energy is a recognized clean energy with ad...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25B1/04C25B11/06
CPCC25B1/04C25B1/55C25B11/051C25B11/075Y02E60/36Y02P20/133
Inventor 李朝升方涛黄辉庭祝梅邹志刚
Owner NANJING UNIV