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High-performance heterojunction material Fe2O3/CuO photoelectrode film as well as preparation method and application thereof

A heterojunction, high-performance technology, applied in the field of photoelectrochemistry, can solve problems such as no related reports, achieve good development prospects, cheap and easily available raw materials, and reduce costs.

Active Publication Date: 2020-10-16
LIAONING UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although in order to improve Fe 2 o 3 Researchers have made a lot of efforts to solve various problems, but the Fe that can effectively improve the photoelectrochemical performance 2 o 3 / CuO heterojunction has not yet been reported

Method used

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  • High-performance heterojunction material Fe2O3/CuO photoelectrode film as well as preparation method and application thereof
  • High-performance heterojunction material Fe2O3/CuO photoelectrode film as well as preparation method and application thereof
  • High-performance heterojunction material Fe2O3/CuO photoelectrode film as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Embodiment 1 A kind of high-performance p-type material CuO photoelectrode powder

[0031] (1) Preparation method

[0032] Dissolve 3.99g of copper sulfate and 5.7mL of 1.3M lactic acid in 50mL of deionized water, stir well, and titrate with 0.5M NaOH to make the pH=11. After the precipitate was completely precipitated, the precipitate was centrifuged, washed, and dried in an oven at 60° C. for 12 hours to obtain a CuO precursor.

[0033] The CuO precursor was calcined in a muffle furnace at 550° C. for 2 h, cooled to room temperature, and then ground to obtain CuO powder, a p-type photoelectrode material.

[0034] (2) Detection

[0035] figure 1 Be the XRD pattern of the photoelectrode material CuO prepared in embodiment 1, by figure 1 It can be seen that the sample has nine obvious diffraction peaks at 32.2°, 33.1°, 35.2°, 38.5°, 48.6°, 53.3°, 58.0°, 61.3°, 65.9°, and 67.9°, which are characteristic peaks of CuO. Pure CuO photoelectrodes The diffraction peaks of th...

Embodiment 2

[0036] Embodiment 2 A kind of high-performance n-type material Fe 2 o 3 Photoelectrode film

[0037] (1) Preparation method

[0038] Dissolve 0.6g of ferric chloride hexahydrate and 1.27g of sodium nitrate in 15mL of deionized water, and stir well to prepare the precursor solution. FTO was cleaned with deionized water and ethanol.

[0039] The precursor solution and FTO were placed in a 50mL hydrothermal kettle, and heated at 100°C for 10h to obtain a FeOOH film.

[0040] The FeOOH film was calcined in a tube furnace at 650 °C for 2 h to obtain a high-performance n-type photoelectrode material Fe 2 o 3 .

Embodiment 3

[0041] Example 3 A high-performance heterojunction material Fe 2 o 3 / CuO photoelectrode film

[0042] (1) Preparation method

[0043] 60 mg of the CuO powder prepared in Example 1 and 0.5 mL of polyethylene glycol were dissolved in 50 mL of ethanol solution, and ultrasonicated for 60 min to obtain a precursor solution.

[0044] Fe prepared by embodiment 2 2 o 3 The film was immersed in the precursor solution, the immersion time was 1 min, and the immersion rate was 1 cm / min.

[0045] The thin film impregnated once was calcined in a muffle furnace at 450 °C for 1 h to obtain a high-performance heterojunction material Fe 2 o 3 / CuO-1 photoelectrode film.

[0046] The film impregnated twice was calcined in a muffle furnace at 450 °C for 1 h to obtain a high-performance heterojunction material Fe 2 o 3 / CuO-2 photoelectrode film.

[0047] The thin film impregnated three times was calcined in a muffle furnace at 450 °C for 1 h to obtain a high-performance heterojunction ...

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Abstract

The invention belongs to the technical field of photoelectrochemistry, and particularly discloses a preparation method and application of a high-performance heterojunction material Fe2O3 / CuO photoelectrode film, and the preparation method comprises the following steps: dissolving a ferric salt and sodium nitrate in deionized water, and growing precursor FeOOH on conductive glass (FTO) through a hydrothermal method; and taking out a precursor film, and calcining to obtain a n-Fe2O3 nano film; dissolving lactic acid and a copper salt in deionized water to enable the pH value to reach 10-12, andcentrifuging, drying and calcining a precipitate to obtain p-CuO powder; loading CuO on the Fe2O3 thin film by using an impregnation method, and finally calcining to obtain the Fe2O3 / CuO heterojunction film. According to the Fe2O3 / CuO photo-anode film prepared by the method disclosed by the invention, electron hole pairs can be effectively separated, and the recombination rate of electron holes isreduced, so that the photoelectrochemical performance can be effectively improved, and the purpose of efficiently decomposing water is achieved.

Description

technical field [0001] The invention belongs to the field of photoelectrochemical technology, in particular to a high-performance heterojunction material Fe 2 o 3 / CuO photoelectrode film and its preparation method and application. Background technique [0002] Due to the limited reserves of fossil fuels and the increasingly prominent environmental problems, photoelectrochemical cells to solve environmental pollution and energy shortages have become the focus of attention. Photoelectrochemical water splitting to produce hydrogen, which converts solar energy into storable chemical energy, is the main means to solve environmental and energy problems in the 21st century. [0003] Hematite (Fe 2 o 3 ) has been widely used as a photoelectrode material for solar water splitting, it has a good band gap energy (1.9-2.2ev); there are enough positive valence band positions in water oxidation reaction; in water and alkaline electrolyte It has good chemical stability; it is low in ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/745B01J35/06C25B11/06C25B1/04
CPCB01J23/745B01J23/002C25B1/04B01J35/39B01J35/33B01J35/59Y02P20/133
Inventor 范晓星马静怡王晓娜宗肖航李林丽
Owner LIAONING UNIVERSITY
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