Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Array substrate and its preparation method, application and performance improvement method

A technology of array substrate and substrate substrate, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, semiconductor devices, etc., can solve the problem of abnormal output current, affecting the threshold voltage of thin-film transistors, and uncontrollable electric field strength of additional electric field And other issues

Active Publication Date: 2019-11-05
BOE TECH GRP CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] In the manufacturing process of display panels or array substrates, the bottom blocking metal (BSM) layer is often used for light shielding layer, fingerprint identification, or in flexible display panels, it is also used to eliminate the influence of mobile charges on the flexible substrate side, but because BSM does not Connected to the circuit, the electric field strength of the additional electric field formed by it is uncontrollable. When the additional electric field acts on the active layer, it may cause the abnormal phenomenon of warping in the saturation area of ​​the output characteristic curve, making the output current abnormal, and even affecting the thin film transistor. threshold voltage of
[0003] Therefore, the research on array substrates needs to be deepened

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Array substrate and its preparation method, application and performance improvement method
  • Array substrate and its preparation method, application and performance improvement method
  • Array substrate and its preparation method, application and performance improvement method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] Embodiments of the present invention are described in detail below. The embodiments described below are exemplary only for explaining the present invention and should not be construed as limiting the present invention. If no specific technique or condition is indicated in the examples, it shall be carried out according to the technique or condition described in the literature in this field or according to the product specification. The reagents or instruments used were not indicated by the manufacturer, and they were all commercially available conventional products.

[0036] In one aspect of the present invention, the present invention provides an array substrate. According to an embodiment of the present invention, refer to Figure 1-4 , the array substrate includes: a base substrate 10; a shielding layer 20, the shielding layer 20 is disposed on a surface 11 of the base substrate 10; a thin film transistor 30, the thin film transistor 30 is disposed on the base subs...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides an array substrate and its preparation method, application and performance improvement method. The array substrate includes: a base substrate; a shielding layer, the shielding layer is arranged on one surface of the base substrate; a thin film transistor, the thin film transistor is arranged on the base substrate and covers the shielding layer; a compensation layer, the compensation layer is arranged on The side of the thin film transistor away from the base substrate is used to form a second electric field in the active layer of the thin film transistor. Therefore, by changing the electric field distribution of the active layer in the thin film transistor, the influence of the first electric field on the characteristics of the thin film transistor is compensated to achieve the technical effect of improving or eliminating the abnormal phenomenon of warping in the saturation region of the output characteristic curve, ensuring normal output of current, At the same time, it improves and compensates the adverse effect of the threshold voltage change of the thin film transistor caused by the first electric field, solves problems such as threshold voltage drift, and restores the thin film transistor to the working state without the first electric field affecting the active layer, or even a better level.

Description

technical field [0001] The present invention relates to the field of display technology, in particular, to an array substrate and its preparation method, application and performance improvement method. Background technique [0002] In the manufacturing process of display panels or array substrates, the bottom blocking metal (BSM) layer is often used for light shielding layer, fingerprint identification, or in flexible display panels, it is also used to eliminate the influence of mobile charges on the flexible substrate side, but because BSM does not Connected to the circuit, the electric field strength of the additional electric field formed by it is uncontrollable. When the additional electric field acts on the active layer, it may cause the abnormal phenomenon of warping in the saturation area of ​​the output characteristic curve, making the output current abnormal, and even affecting the thin film transistor. threshold voltage. [0003] Therefore, the research on the arr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/58H01L27/12H01L21/84
CPCH01L23/585H01L27/1218H01L27/1296H01L29/78633H01L27/1251H01L27/127
Inventor 刘政赵梦田宏伟
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products