Quantum-dot light-emitting diode device having novel anode structure and preparation method thereof

A quantum dot light-emitting and diode technology, applied in the field of quantum dots, can solve the problems of low light output efficiency of quantum dot light-emitting diodes, achieve the effect of improving light transmittance and conductivity, and improving light output efficiency

Inactive Publication Date: 2018-10-09
TCL CORPORATION
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  • Abstract
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Problems solved by technology

[0005] In view of the above deficiencies in the prior art, the object of the present invention is to provide a quantum dot light emitting diode device with high light e

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  • Quantum-dot light-emitting diode device having novel anode structure and preparation method thereof
  • Quantum-dot light-emitting diode device having novel anode structure and preparation method thereof

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[0028] The present invention provides a quantum dot light-emitting diode device with high light extraction efficiency and a preparation method thereof. In order to make the objectives, technical solutions and effects of the present invention clearer and clearer, the present invention will be described in further detail below. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.

[0029] See figure 1 , figure 1 It is a schematic structural diagram of a preferred embodiment of a quantum dot light emitting diode device with high light extraction efficiency of the present invention. As shown in the figure, the embodiment of the present invention takes a positive quantum dot light emitting diode device as an example, and the device includes bottom to top The substrate 10, the bottom electrode 20, the hole transport layer 30, the quantum dot light-emitting layer 40, the electron tra...

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Abstract

The invention discloses a quantum-dot light-emitting diode device having high light extraction efficiency and a preparation method thereof. The device comprises a substrate, a bottom electrode, a holetransport layer, a quantum-dot light-emitting layer, an electron transport layer, an electron injection layer and a top electrode, which are stacked up in sequence. The device is characterized in that the bottom electrode comprises a first ITO thin film layer, an alloy film layer and a second ITO thin film layer, which are stacked up in sequence from the bottom up; and the alloy film layer and the second ITO thin film layer are set into a same periodic grid structure. By adding the alloy film layer to the bottom electrode, light transmittance and conductive performance of the bottom electrodecan be improved, and the second ITO thin film layer can protect the alloy film layer from oxidation corrosion; and furthermore, since the alloy film layer and the second ITO thin film layer are set into the same periodic grid structure, the bottom electrode is allowed to have a scattering characteristic, and light extraction efficiency of the device is improved effectively.

Description

technical field [0001] The invention relates to the technical field of quantum dots, in particular to a quantum dot light-emitting diode device with a novel anode structure and a preparation method thereof. Background technique [0002] Compared with organic luminescent fuels and inorganic phosphors, quantum dot light-emitting diodes (QLEDs) with semiconductor quantum dot materials as the light-emitting layer have excellent optical and device stability; this makes quantum dot light-emitting diodes in optoelectronics, photovoltaics and biological The field of marking has a wide range of applications, especially in the application of light-emitting diodes. Quantum dot light-emitting diodes will lead the development of a new generation of products in the display and solid-state lighting industries. [0003] Although the device efficiency and service life of QLED have been greatly improved through the improvement of quantum dot materials, its light extraction efficiency is still...

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Application Information

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IPC IPC(8): H01L51/52H01L51/56H01L51/50
CPCH10K50/115H10K50/813H10K50/816H10K50/854H10K71/00
Inventor 朱佩曹蔚然
Owner TCL CORPORATION
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