Method for preparing CN thin film through ion beam deposition

Abstract

The invention discloses a method for preparing a CN thin film through ion beam deposition. The method comprises following steps that S1, a substrate is cleaned, and oil contamination and impurities onthe surface of the substrate are removed; S2, an ion beam deposition device and an ion implantation machine which communicate are adopted, the ion beam deposition device adopts a target C, the substrate is placed in a vacuum cavity of the ion beam deposition device, argon ions are used for bombarding the target C, meanwhile, the ion implantation machine is started for injecting N ions, and the CNthin film is obtained from the surface of the substrate; the process parameters of the target C are independently controlled through the ion beam deposition device, providing of N ion sources is finished through the ion implantation machine, in the whole process, the ion beam deposition device and the ion implantation machine independently work and do not interfere with each other; C and N have asimple reaction to obtain the CN thin film, other ions do not exist, the process is simple, and controllability is higher.

Description

technical field [0001] The invention relates to the technical field of functional thin films, in particular to a method for preparing CN thin films by ion beam deposition. Background technique [0002] In the 1990s, some scientists predicted for the first time that CN, a compound that does not exist in nature, can be artificially synthesized, which has great polymerization energy and mechanical stability. Then Teter et al. speculated on the structure of CN and found that there are five kinds of CN compounds in the form of α phase, β phase, cubic phase, quasi-cubic phase and graphite-like phase. Studies have shown that except for the graphite-like phase, the theoretical values ​​of the bulk elastic modulus of the other four CNs can be compared with those of diamond, and are considered to be a new type of superhard material. At the same time, through the change of process performance, CN can have very high Very good physical and optical properties such as high resistivity and...

AI Technical Summary

Problems solved by technology

However, the traditional methods for preparing CN thin films all use N 2 as N source, since N 2 strong stability, it is difficult to make N 2 ionized and reacted with C to give CN film