Two-dimensional ultrafast accurate nonvolatile memory based on self-rectification characteristic material and preparation method thereof

A non-volatile memory and characteristic material technology, which is applied in the field of two-dimensional quasi-nonvolatile memory and its preparation, can solve problems such as complex structures, and achieve the effect of improving data writing speed, large application prospects, and writing data

Inactive Publication Date: 2018-10-12
FUDAN UNIV
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Problems solved by technology

[0004] Although the semi-floating gate transistor also has the cha...

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  • Two-dimensional ultrafast accurate nonvolatile memory based on self-rectification characteristic material and preparation method thereof
  • Two-dimensional ultrafast accurate nonvolatile memory based on self-rectification characteristic material and preparation method thereof
  • Two-dimensional ultrafast accurate nonvolatile memory based on self-rectification characteristic material and preparation method thereof

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Embodiment Construction

[0037] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals represent the same or similar materials or methods having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention. To simplify the disclosure of the present invention, the materials and methods of specific examples are described below. Of course, they are only examples and are not intended to limit the invention. In addition, various specific process and material examples are provided herein, but one of ordinary skill in the art will recognize the applicability of other processes and / or the use of other materials.

[0038] Hereinafter, according to the accompanying drawings, an example will be given to describe the preparation method of the two-dimens...

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Abstract

The invention belongs to the technical field of memories, and specifically discloses a two-dimensional ultrafast accurate nonvolatile memory based on a self-rectification characteristic material and apreparation method thereof. The material with a self-rectification characteristic is used for replacing the channel and tunneling layers of a traditional flash memory (Flash), and through a switchingcharacteristic of the material, a tunneling mechanism of traditional charges is replaced to realize ultrafast write-in and accurate nonvolatile memory. The preparation method comprises the followingsteps: firstly using mechanical stripping or chemical vapor deposition to obtain a two-dimensional material as a charge storage layer on a substrate, and then using molecular beam epitaxy to grow theself-rectification characteristic material CrX3 as device channels and switches. The novel memory with ultrafast write-in capacity and accurate nonvolatile characteristic can be prepared, the data storage time span between a dynamic random access memory and a flash memory is remedied, and the novel memory has great application prospects in the field of future memories.

Description

technical field [0001] The invention belongs to the technical field of memory, and in particular relates to a two-dimensional quasi-nonvolatile memory and a preparation method thereof. Background technique [0002] Semiconductor memory is an important information memory device in modern information technology. According to the length of time it saves data, it can be roughly divided into volatile memory and non-volatile memory. Volatile memory is characterized by fast writing speed, short data retention time, and data loss when power is off. Typical volatile memories include static random access memory (SRAM) and dynamic random access memory (DRAM). Although the writing speed is very fast (on the order of nanoseconds), the data can only be kept on the order of milliseconds. Non-volatile memory (such as flash memory, Flash) is characterized by long-term data retention (usually greater than 10 years), but relatively slow write speed (currently the fastest flash memory write s...

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Application Information

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IPC IPC(8): H01L27/115H01L27/11563H01L27/11568H01L27/11578
CPCH10B43/00H10B43/30H10B69/00H10B43/20
Inventor 周鹏侯翔高春雷张卫
Owner FUDAN UNIV
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