Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Mask and manufacturing method thereof

A manufacturing method and mask technology, applied in semiconductor/solid-state device manufacturing, ion implantation plating, coating, etc., can solve the problems affecting the deposition quality of organic light-emitting layers, and the quality and accuracy of metal masks cannot be well satisfied Requirements, issues affecting product quality, etc., to achieve the effect of improving restrictions, increasing robustness, and improving accuracy

Active Publication Date: 2018-10-12
NINGBO SEMICON INT CORP
View PDF5 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The opening quality and opening position accuracy of the metal mask directly affect the deposition quality of the organic light-emitting layer, which in turn affects the quality of later products
At present, the metal mask processing technology of OLED is usually prepared by chemical etching using Invar alloy (INVAR, also known as Invar). The fine pattern of the mask plate is transferred on the photosensitive film by means of developing and chemical etching to finally make a fine metal mask plate. The precision of this method is usually in the micron level, so the metal mask plate made The quality and accuracy cannot meet the requirements very well

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Mask and manufacturing method thereof
  • Mask and manufacturing method thereof
  • Mask and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] In view of the aforementioned technical problems, the present invention proposes a mask, which mainly includes:

[0055] a substrate having a first surface and a second surface opposite to each other, the substrate has a plurality of openings penetrating through the substrate, and the material of the substrate is a material capable of performing a semiconductor etching process;

[0056] A mask pattern layer located on the first surface, the material of the mask pattern layer is a material capable of performing a semiconductor etching process;

[0057] The mask pattern layer has a pattern area and a shielding area, each of the pattern areas has at least one through hole, and the opening exposes the pattern area, and each of the openings is opposite to one of the pattern areas and exposes For all through holes in the pattern area, the shielding area is located outside the pattern area and opposite to the substrate.

[0058] The mask plate of the present invention is made...

Embodiment 2

[0084] The present invention also provides a method for manufacturing a mask, such as Figure 7 As shown, it mainly includes the following steps:

[0085] Step S1, providing a substrate having a first surface and a second surface opposite to each other, and a mask layer is formed on the first surface of the substrate;

[0086] Step S2: Etch the mask layer using a semiconductor etching process according to a predetermined pattern to form a mask pattern layer, the mask pattern layer has a pattern area and a shielding area, each of the pattern areas has at least one pass a hole, the shielding area is located outside the graphic area;

[0087] Step S3 , etching the substrate from the second surface by using a semiconductor etching process to form a plurality of openings penetrating through the substrate, wherein the openings expose the pattern area.

[0088] Below, refer to Figure 1A to Figure 1J The manufacturing method of the mask plate of the present invention is described i...

Embodiment 3

[0138] It is worth mentioning that, in order to obtain the mask in the first embodiment, the order of the method steps in the embodiment can also be changed to prepare and obtain the corresponding mask, for example, in order to obtain image 3 mask structure in , the following steps can also be performed:

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a mask and a manufacturing method thereof. The mask comprises a substrate and a mask pattern layer positioned on the first surface; the substrate has a first surface and a second surface which are arranged oppositely; multiple openings for running through the substrate are formed in the substrate; the substrate material is a material which can be subjected to a semiconductoretching process; the mask pattern layer material is a material which can be subjected to a semiconductor etching process; the mask pattern layer has pattern regions and shielding regions; at least one through hole is formed in each pattern region; the openings expose the pattern regions; each opening is opposite to one pattern region and exposes all through holes in the corresponding pattern region; and the shielding regions are positioned outside the pattern regions and opposite to the substrate. The mask is high in quality and higher in precision; and when the mask is used for an evaporation process of an organic layer, the deposition quality of the organic layer can be improved, and quality of a post-period product is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a mask and a manufacturing method thereof. Background technique [0002] Compared with the current liquid crystal display technology, Organic Light-Emitting Dide (OLED) has the advantages of large viewing angle, bright colors, and low power consumption. In recent years, the speed of industrialization has advanced by leaps and bounds. [0003] In the current manufacturing process of the OLED display panel, the organic light-emitting layer is usually formed by evaporation, and the evaporation of the organic light-emitting layer generally uses a metal mask. The opening quality and opening position accuracy of the metal mask directly affect the deposition quality of the organic light-emitting layer, which in turn affects the quality of later products. At present, the metal mask processing technology of OLED is usually prepared by chemical etching using Invar alloy (INVAR, als...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L51/56C23C14/04
CPCC23C14/042H10K71/166
Inventor 刘孟彬罗海龙
Owner NINGBO SEMICON INT CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products