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A method for transferring metal crack networks to polymer films

A polymer film and metal film technology, which is applied in the photoengraving process of the pattern surface, microlithography exposure equipment, instruments, etc., can solve the problems of inability and reduced adhesion, and achieves easy operation, low cost, and prospects. Good results

Active Publication Date: 2021-06-18
INT ACAD OF OPTOELECTRONICS AT ZHAOQING SOUTH CHINA NORMAL UNIV +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, for thinner networks between 50 and 300nm, the transfer cannot be achieved using the above methods due to the reduced surface area resulting in reduced adhesion between the network and the material to be transferred.

Method used

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  • A method for transferring metal crack networks to polymer films
  • A method for transferring metal crack networks to polymer films
  • A method for transferring metal crack networks to polymer films

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Further explain the present invention by specific method below:

[0028] like figure 1 As shown, in step S1, a thin layer of amorphous carbon can be deposited on the substrate using a photolithographic template, for example, it can be achieved by "flashing" depositing an a-C (amorphous carbon) layer larger than 5 nm on the photolithographic template. This is done by applying a high current to the carbon wire at low gas pressure. The carbon glows and breaks during the flash, allowing the material to be deposited (a common technique for making samples conductive when making SEM coatings). Other methods of depositing carbon films can also be used.

[0029] like figure 2 As shown, depositing an a-C layer larger than 5 nm does not prevent the removal of the lithographic template, while ensuring sufficient adhesion of the metal network to the glass support. with H 2 Cleaning with O and common organic solvents and ultrasonic treatment can remove the photolithographic temp...

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Abstract

The invention provides a method for transferring a metal crack network to a polymer film, comprising the steps of: S1. depositing amorphous carbon on a substrate to form a lubricating layer, and depositing a metal film with a crack network on the lubricating layer; S2. A substance that can cross-link with the substrate is coated on the substrate deposited in S1 to form a cross-linked layer. Polymerization occurs on the cross-linked layer to form a polymer, and the polymer is directly polymerized with the crack network of the metal film. And cross-linking; S3. The polymer is peeled off the substrate, and the metal film with the crack network is transferred to the polymer at the same time. The invention provides a method for transferring a 50-300nm metal crack network to a polymer film, which is easy to operate and low in cost, and has good prospects for being applied to the assembly of flexible electronic devices or the preparation of responsive surface coating materials.

Description

technical field [0001] The invention belongs to the technical field of optical device preparation, and more specifically relates to a method for transferring a metal crack network to a polymer film. Background technique [0002] Self-shaped metal networks have excellent potential applications as excellent heterogeneous transparent conductors. For example, a silver crack network disclosed in Uniform self-forming metallic network as a high-performance transparentconductive electrode. Advanced materials (Deerfield Beach, Fla.) 2014;26(6):873–7, this electrode is an interconnect The metal network or metal film with perforations has excellent electrical conductivity and light transmittance, and the photolithography template is obtained by forming cracks in the gel film during the drying process. Egg white and nail polish are typical gels used to prepare photolithographic templates. The substrate and the gel must have good wettability, which ensures the key to the formation of cr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20G03F7/38
CPCG03F7/38G03F7/70216
Inventor 埃泽尔·马丁·阿金诺古劳伦斯·德·哈恩高进伟薛亚飞周国富金名亮迈克尔·吉尔森
Owner INT ACAD OF OPTOELECTRONICS AT ZHAOQING SOUTH CHINA NORMAL UNIV