Preparation method of photoresist film

Abstract

The invention discloses a preparation method of a photoresist film. The method comprises the steps of: carrying out primary gluing on a substrate to form a first layer of photoresist film; carrying out full exposure on the first layer of photoresist film; carrying out secondary gluing on the first layer of photoresist film so as to form a second layer of photoresist film; carrying out partial exposure on the second layer of photoresist film according to a photoetching pattern; and simultaneously carrying out development on the first layer of photoresist film and the second layer of photoresistfilm. According to the invention, on the basis of the original first layer of photoresist film, production of the second layer of photoresist film is carried out by using the same process, a photoresist with a specific attribute does not need to be selected, problems of purchasing and development of a new material do not exist, only process steps are increased, the development difficulty is relatively low, the applicability is high, and the technical problem that in the prior art, a method for producing an inverted-trapezoid-like photoresist film may be high in production cost and high in process difficulty, even may influence safety of an operator or cause performance reduction of a device and the like are solved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing a photoresist film. Background technique [0002] There is a demand for metal structure preparation in the semiconductor chip preparation process, and the lift-off process is a widely used method for the preparation of metal structures for semiconductor devices. In the prior art, the schematic diagram of the process flow of the commonly used stripping process is as follows figure 1 As shown, it specifically includes that the surface of the cleaned wafer is coated, pre-baked, exposed, developed and other processes in the photolithography process, and the metal structure pattern to be grown is copied to the surface of the substrate material in the form of a photoresist film; The metal film layer is deposited on the surface of the substrate material by sputtering, evaporation and other processes; the substrate with the tape metal film layer is soaked i...

AI Technical Summary

Problems solved by technology

[0005] The invention provides a method for preparing a photoresist film, which is used to solve the possible problems of high production cost and difficult process in the method of manufacturing an inverted trapezoidal photoresist film in the prior art, which may even affect the safety or safety of operators. Lead to technical problems such as device performance degradation

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