Low noise amplifier with built-in single-ended input to differential output structure

A technology of low noise amplifier and output structure, applied in the field of radio frequency communication, can solve the problems of increasing chip cost, large Balun area, reducing system integration and performance, etc., to achieve the effect of reducing sensitivity

Pending Publication Date: 2018-11-02
SHANGHAI PANCHIP MICROELECTRONICS CO LTD
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The advantage of this structure is that there is no need for additional matching circuits, and the system is relatively simple; its main disadvantage is that the area of ​​the Balun is very large, which increases the cost of the chip; at the same time, the balance conver

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low noise amplifier with built-in single-ended input to differential output structure
  • Low noise amplifier with built-in single-ended input to differential output structure
  • Low noise amplifier with built-in single-ended input to differential output structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] The following describes several preferred embodiments of the present invention with reference to the accompanying drawings, so as to make the technical content clearer and easier to understand. The present invention can be embodied in many different forms of embodiments, and the protection scope of the present invention is not limited to the embodiments mentioned herein.

[0031] In the drawings, components with the same structure are denoted by the same numerals, and components with similar structures or functions are denoted by similar numerals. The size and thickness of each component shown in the drawings are shown arbitrarily, and the present invention does not limit the size and thickness of each component. In order to make the illustration clearer, the thickness of parts is appropriately exaggerated in some places in the drawings.

[0032] Such as figure 2 As shown, a low-noise amplifier with a built-in single-ended input-to-differential output structure, whic...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a low noise amplifier with a built-in single-ended input to differential output structure, which relates to the technical field of radio frequency communication. The low noiseamplifier with the built-in single-ended input to differential output structure comprises an input matching circuit and an output load matching circuit, and further comprises a first stage amplification circuit and a second stage amplification circuit which are interconnected, wherein the input matching circuit is connected with the first stage amplification circuit, the first stage amplificationcircuit is connected with the second stage amplification circuit, and the second stage amplification circuit is connected with the output load matching circuit. Such structure has the advantages of being small in area and low in cost and having no need of an external matching circuit, and through verification by actual current sheets, in comparison with the conventional structure with balun at input, sensitivity of the structure provided by the invention is promoted by 2-3dB.

Description

technical field [0001] The invention relates to the technical field of radio frequency communication, in particular to a low-noise amplifier with a built-in single-end input-to-differential output structure. Background technique [0002] With the rapid development of wireless communication technology and CMOS integrated circuit technology, miniaturization, low power consumption, low cost, and high performance of wireless terminals have become an inevitable trend in the development of radio frequency integrated circuits (RFICs). [0003] In RF receiver design, the key to good overall system performance is a superior front end. The low-noise amplifier (LNA) of the first-stage module of the RF receiver is one of the most critical circuits. The LNA needs to have a good noise figure and provide sufficient gain to ensure that the entire receiving system has a minimum NF; at the same time, when the receiving signal When larger, there should be enough linearity to reduce signal dis...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H03F1/26H03F3/195H03F3/45H04B1/10
CPCH03F1/26H03F3/195H03F3/45071H03F2200/294H03F2200/451H04B1/1009
Inventor 刘明李宝骐潘兆琳
Owner SHANGHAI PANCHIP MICROELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap