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Method for in situ non-destructive stripping of quantum dots

A quantum dot and in-situ technology, which is applied in the field of in-situ non-destructive peeling of quantum dots, can solve the problems of material damage, uneconomical, pollution, etc., achieve low cost, wide applicability, and reduce the effect of anisotropy

Active Publication Date: 2018-11-06
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] In order to solve the above-mentioned technical problems, the object of the present invention is to provide a method for in-situ non-destructive exfoliation of quantum dots. The method of the present invention can effectively avoid oxidation, pollution, material damage, time-consuming and uneconomical problems in the current mainstream exfoliation methods. question

Method used

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  • Method for in situ non-destructive stripping of quantum dots
  • Method for in situ non-destructive stripping of quantum dots

Examples

Experimental program
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Embodiment 1

[0034] The InAs / GaAs quantum dot sample to be stripped (that is, the InAs quantum dots are distributed on the substrate surface formed by the GaAs film) is heated to the critical desorption temperature of InAs in the MBE growth chamber under the premise of an As-rich atmosphere. In this embodiment, the arsenic pressure is set to 8.0×10 -7 Torr, the critical desorption temperature is 525°C. Such as image 3 As shown, the AFM test results of the quantum dot sample to be stripped show that a certain density of InAs quantum dots (white dots) have been successfully grown on the surface of the GaAs substrate.

[0035] Immediately, a single pulse laser was introduced to irradiate the surface of the sample, wherein the laser wavelength was 355nm, the pulse width was 10ns, and the laser energy was 10mJ. The surface of the sample after laser irradiation Figure 4 As shown, I can see that the InAs quantum dots have been peeled off (the white dots have disappeared), leaving only a flat...

Embodiment 2

[0039] According to the method of Example 1, the InAs quantum dots in the InAs / GaAs quantum dot sample are peeled off, the difference is that the arsenic pressure is set to 8.0×10 -6 Torr, the critical desorption temperature is 510°C, and the laser energy of the single pulse laser is 15mJ.

Embodiment 3

[0041] According to the method of Example 1, the InAs quantum dots in the InAs / GaAs quantum dot sample are peeled off, the difference is that the arsenic pressure is set to 8.0×10 -7 Torr, the critical desorption temperature is 530°C, and the laser energy of the single pulse laser is 20mJ.

[0042] In addition, according to the above method, different quantum dot systems can also be selected, such as InSb / AlSb quantum dots, InSb / GaSb quantum dots, InSb / AlAs quantum dots, InSb / GaAs quantum dots, InN / AlN quantum dots or InN / GaN quantum dots Dot system, before the " / " is the quantum dot, after the " / " is the substrate material, the quantum dot with a lower vacuum energy level barrier and a lower bond energy in the quantum dot system is stripped, and the specific critical desorption temperature The settings and selection of pulsed laser parameters are set according to the energy of the quantum dots to be exfoliated.

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Abstract

The invention relates to a method for in situ non-destructive stripping of quantum dots. The method comprises the following steps: heating a substrate having quantum dots on the surface thereof to thecritical desorption temperature of quantum dots, wherein the quantum dots are III-V group quantum dots, the material of the substrate is a III-V compound, and the bond energy of the quantum dots is lower than the bond energy of the compound in the substrate; then applying pulse laser to the quantum dots, so that the atoms in the quantum dots are excited and detached in situ from the surface of the substrate. The method provided by the invention can effectively avoid the problems of oxidation, pollution, material destruction, time consuming and diseconomy existing in current mainstream stripping methods.

Description

technical field [0001] The invention relates to the technical field of quantum dot stripping, in particular to a method for in-situ non-destructive stripping of quantum dots. Background technique [0002] The growth of quantum dots is mainly based on molecular beam epitaxy (MBE) technology. The controllability of molecular beam epitaxy plays an extremely important role in promoting the development of quantum dots. The exfoliation of quantum dots during the experiment is an important step in the controllable measures of molecular beam epitaxy. [0003] In the early days of molecular beam epitaxy technology, scientists often use the increase of substrate temperature to perform thermal evaporation from the substrate surface to achieve the peeling of quantum dots. This method can achieve large-scale peeling and is easy to operate. However, it is worth noting that high-temperature stripping cannot accurately control the stripping area, which limits the breadth of application of...

Claims

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Application Information

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IPC IPC(8): C01G28/00C01G30/00C01B21/06B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C01B21/0632C01G28/00C01G30/00
Inventor 石震武缪力力杨琳韵杨新宁彭长四
Owner SUZHOU UNIV
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