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Method for spreading gallium-based liquid metal on surface of solid sheet

A liquid metal and solid technology, applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the problems of difficult industrialization, high process cost, labor cost, etc., and achieve simple process and high thermal conductivity , Improve the effect of wettability

Active Publication Date: 2018-11-06
LUDONG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The process of machining spherical or ellipsoidal small holes on the solid surface is costly, and injecting metal droplets into the small holes consumes labor costs and is difficult to industrialize.

Method used

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  • Method for spreading gallium-based liquid metal on surface of solid sheet
  • Method for spreading gallium-based liquid metal on surface of solid sheet
  • Method for spreading gallium-based liquid metal on surface of solid sheet

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] (1) High-purity Ga 2 o 3 The target is installed in the water-cooled RF cathode target groove in the sputtering chamber of the magnetron sputtering device, the cleaned copper sheet is fixed on the substrate holder, the substrate holder is inserted into the substrate turntable in the sputtering chamber, and adjusted Copper and Ga 2 o 3 The target distance is 60mm.

[0025] (2) Vacuum the sputtering chamber until the base pressure of the sputtering chamber is less than 5.0×10 -4 Pa, fill the sputtering chamber with high-purity Ar gas with a flow rate of 20 SCCM, and adjust the pumping volume to maintain the Ar pressure in the sputtering chamber at 2 Pa.

[0026] (3) Turn on Ga 2 o3 RF power supply for the target, sputtering power density 1.5W / cm 2 , after the radio frequency glow discharge is stable, open the baffle to prepare Ga on the surface of the copper sheet 2 o 3 thin film, by controlling the sputtering time to make Ga 2 o 3 The film thickness is 50nm.

...

Embodiment 2

[0030] (1) High-purity Ga 2 o 3 The target is installed in the water-cooled RF cathode target groove in the sputtering chamber of the magnetron sputtering device, the cleaned silicon wafer is fixed on the substrate holder, the substrate holder is inserted into the substrate turntable in the sputtering chamber, and adjusted Silicon and Ga 2 o 3 The target distance is 70mm.

[0031] (2) Vacuum the sputtering chamber until the base pressure of the sputtering chamber is less than 5.0×10 -4 Pa, fill the sputtering chamber with high-purity Ar gas with a flow rate of 20 SCCM, and adjust the pumping volume to maintain the Ar pressure in the sputtering chamber at 0.2 Pa.

[0032] (3) Turn on Ga 2 o 3 The RF power supply of the target, the sputtering power density is 5.3W / cm 2 , after the radio frequency glow discharge is stable, open the baffle to prepare Ga on the surface of the silicon wafer 2 o 3 thin film, by controlling the sputtering time to make Ga 2 o 3 The film thic...

Embodiment 3

[0036] (1) High-purity Ga 2 o 3 The target is installed in the water-cooled RF cathode target groove in the sputtering chamber of the magnetron sputtering device, the cleaned copper sheet is fixed on the substrate holder, the substrate holder is inserted into the substrate turntable in the sputtering chamber, and adjusted Copper and Ga 2 o 3 The target distance is 65mm.

[0037] (2) Vacuum the sputtering chamber until the base pressure of the sputtering chamber is less than 5.0×10 -4 Pa, fill the sputtering chamber with high-purity Ar gas with a flow rate of 20 SCCM, and adjust the pumping volume to maintain the Ar pressure in the sputtering chamber at 0.5 Pa.

[0038] (3) Turn on Ga 2 o 3 RF power supply for the target, sputtering power density 2.5W / cm 2 , after the radio frequency glow discharge is stable, open the baffle to prepare Ga on the surface of the copper sheet 2 o 3 thin film, by controlling the sputtering time to make Ga 2 o 3 The film thickness is 100n...

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Abstract

The invention provides a method for spreading gallium-based liquid metal on the surface of a solid sheet and belongs to the technical field of electronic device radiating. The method is characterizedin that a continuous Ga2O3 film layer is deposited on the surface of an non-infiltration solid sheet, and performing reducing annealing on the Ga2O3 film to form a composite-structure film comprisinga Ga2O3 layer, a Ga-O mixed layer and a metal Ga layer from inside to outside; the gallium-based metal is dripped to the surface of the composite-structure film, complete wetting between the gallium-based liquid metal and the metal Ga layer is achieved, and the liquid metal is spread on the surface of the solid sheet. The method has the advantages that electric conduction between the solid sheet and the liquid metal is avoided, and the infiltration and spreading of the gallium-based liquid metal on the surface of the solid sheet are achieved.

Description

technical field [0001] The invention relates to a method for realizing gallium-based liquid metal spreading on the surface of a solid sheet, and belongs to the technical field of heat dissipation of electronic devices. Background technique [0002] Liquid metals refer to metals or metal compounds with low melting points. Generally speaking, it melts into a liquid state at normal temperature or at a temperature slightly higher than normal temperature. Common liquid metals such as mercury, gallium metal and gallium-based metal compounds. Liquid metals have been widely used in various aspects such as energy management, conversion and storage due to their high thermal and electrical conductivity. As we all know, liquid metal gallium and its alloys have the advantages of low melting point, high thermal conductivity and good fluidity, especially their thermal conductivity is much higher than conventional thermal interface materials such as silicone oil or nanoparticle materials ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/35C23C14/58
CPCC23C14/08C23C14/35C23C14/5806C23C14/5846
Inventor 闫金良闫慧龙李宏光
Owner LUDONG UNIVERSITY
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