Novel CZT radiation detector structure free of carrier injection and preparation method

Abstract

The invention discloses a novel CZT radiation detector structure free of carrier injection and a preparation method. A negative electrode is prepared by adopting a material of which a work function isgreater than that of CZT crystal at one side of the CZT crystal, and a positive electrode is prepared by adopting a material of which the work function is smaller than that of the CZT crystal at theother side of the CZT crystal. A special electrode material is adopted, so that Schottky contact can be achieved at two sides of a detector, injection of electrode carriers at the two sides can be effectively inhibited, leakage current can be reduced, noise of the detector can be suppressed, meanwhile, photon-generated carriers generated through radiation can also be effectively collected, the collection efficiency is improved, the radiation dose is effectively utilized, the sensitivity and the energy resolution of the detector are improved, the performance of the detector is greatly improved,furthermore, the deficiency of a CZT crystal material in performance is also compensated, the utilization rate of the crystal material is improved, the pass rate of the detector is improved and the cost is reduced.

Description

technical field [0001] The invention relates to the technical field of radiation detection devices, in particular to a novel CZT radiation detector structure and preparation method without carrier injection. Background technique [0002] Cadmium zinc telluride (CZT), a new generation of compound semiconductors, is an ideal material for the manufacture of x-ray and low-energy gamma-ray detectors. CZT detectors can directly convert x-rays or γ-rays into electrical signals. Because of the direct conversion, the advantage is that there is no light scattering in the indirect conversion process of traditional scintillator detectors, so the spatial resolution is high and the structure is simple. [0003] Since cadmium zinc telluride is a ternary compound material, there are defects caused by component deviation and impurities during the preparation process. At the same time, defects are also caused due to the incomplete crystal lattice during the preparation process. Therefore, the...

AI Technical Summary

Problems solved by technology

When the light is stopped, there are still some signals in the figure, indicating that a part of the photogenerated carriers are trapped inside the detector and cannot be collected effectively

It takes several minutes to remove these trapped carriers, which is very detrimental to detectors with high-speed operation requirements

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