Semiconductor light emitting device

Abstract

A semiconductor light emitting device is provided that may include: a light emitting structure in which a conductive substrate, a second conductive type semiconductor layer, an active layer, and a first conductive type semiconductor layer are stacked; a diffusion metal layer and an insulating layer disposed between the conductive substrate and the second conductive type semiconductor layer; and areflecting electrode layer disposed under the second conductive type semiconductor layer, wherein a top surface of the reflecting electrode layer, facing the second conductive type semiconductor layer, has a smaller area than a bottom surface of the second conductive type semiconductor layer, the diffusion metal layer forms a plurality of via holes extended to an inside of the first conductive type semiconductor layer through the insulating layer, the second conductive type semiconductor layer, and an active layer, and electrically couples the diffusion metal layer to the first conductive typesemiconductor layer through the via holes, and a shortest distance D2 between an arbitrary via hole and another via hole adjacent to the via hole is larger than a shortest distance D3 between the viahole which is the closest to an outside of the first conductive type semiconductor layer and an outside of the second conductive type semiconductor layer.

Description

[0001] This application is a divisional application of a patent application entitled "Semiconductor Light Emitting Device" with an application date of December 17, 2015 and an application number of 201510954206.2. technical field [0002] The present invention relates to a nitride semiconductor light-emitting device, and more particularly, to a semiconductor light-emitting device capable of improving optical efficiency and having a simple structure, a method for preparing the semiconductor light-emitting device, and a light-emitting device including a structure for improving the current diffusion effect . Background technique [0003] A semiconductor light emitting device (such as a nitride semiconductor light emitting device) generally includes a light emitting structure, a first electrode (such as an n-electrode or an n-electrode pad) and a second electrode (such as a p-electrode or a p-electrode pad). The light-emitting structure includes a first conductive type semicondu...

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Problems solved by technology

[0013] At this time, the injected current is likely to be concentrated around the irregular part of the hole electrode, and this concentration of current inevitably reduces the luminous efficiency of the light-emitting device.

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