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Preparation method of polysilicon

A technology of polysilicon and silicon rods, applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve the problems of unrecoverable, low yield, low reaction temperature, etc., to reduce energy consumption, production cost, electricity consumption, etc. consumption effect

Inactive Publication Date: 2018-11-20
SICHUAN YONGXIANG POLY SILICON
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method has a high production rate, but because the free radicals of silicon are relatively active and the reaction temperature is low, some materials will undergo homogeneous nucleation, that is, part of the silicon is not grown on the silicon rods or silicon cores in the reduction furnace, but It is directly reacted in the cavity of the reduction furnace to generate silicon, which is accumulated on the bottom plate and the furnace wall and cannot be recovered, so that the actual yield of this method is very low

Method used

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  • Preparation method of polysilicon

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Effect test

Embodiment 1

[0028] Such as figure 1 as shown,

[0029] A method for preparing polysilicon, comprising:

[0030] Heating and vaporizing dichlorodihydrosilane at 100°C to 110°C to obtain dichlorodihydrosilane gas; the preparation method further includes: heating and vaporizing trichlorosilane at 100°C to 110°C to obtain the trichlorosilane gas;

[0031] Mix dichlorodihydrosilane gas, trichlorosilane gas and hydrogen gas in a mixing chamber to obtain a mixture; the hydrogen gas is preheated hydrogen gas, and the preheating temperature is 90°C to 100°C;

[0032] The mixed material is sent to the reduction furnace, and the third mixed material is subjected to gas-phase chemical precipitation reaction in the reduction furnace, and polysilicon is generated on the surface of the silicon core in the reduction furnace to obtain silicon rods; the temperature condition of the gas-phase chemical precipitation reaction is 1020 ° C ~ 1120 ° C ℃, the pressure condition is 0.45MPa~0.5MPa.

[0033] in, ...

Embodiment 2

[0038] The difference between this embodiment and embodiment 1 is that, in volume percentage, the dichlorodihydrosilane gas content in the mixture in the early stage of silicon rod growth is 12%.

[0039] In the preparation method of the above-mentioned polysilicon, the polysilicon generated grows on silicon rods or silicon cores, and the primary conversion rate is greater than 16%. 24 pairs of electric shock bars polysilicon reduction furnace meter).

Embodiment 3

[0041] The difference between this embodiment and embodiment 1 is that, in volume percentage, the content of dichlorodihydrosilane gas in the mixture in the early stage of silicon rod growth is 15%.

[0042] In the preparation method of the above-mentioned polysilicon, the polysilicon generated grows on silicon rods or silicon cores, the primary conversion rate is greater than 17%, the entire growth cycle of the silicon rods is within 100 hours, and the average power consumption per kilogram of polysilicon is 46 degrees (within 24 pairs of electric shock bars polysilicon reduction furnace meter).

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Abstract

The invention discloses a preparation method of polysilicon, comprising: mixing dichlorosilane, trichlorosilane and hydrogen to obtain a mixture; and feeding the mixture into a reduction furnace, andperforming a gas phase chemical precipitation reaction on the third mixture to generate polysilicon on the surface of silicon cores, thereby obtaining silicon rods. The preparation method causes the generated polysilicon to grow on the silicon rods or the silicon cores, thereby improving the yield, shortening the entire growth period of the silicon rods, at the same time, reducing the power consumption and reducing the cost.

Description

technical field [0001] The invention relates to the technical field of polysilicon production, in particular to a method for preparing polysilicon. Background technique [0002] Polysilicon is the raw material for the preparation of solar cells and the foundation of the photovoltaic industry around the world. At present, most factories at home and abroad use trichlorosilane as the silicon source to produce polysilicon. Although the yield of this method is not low, this method all separates the dichlorodihydrosilane produced in the production process as a by-product. This not only complicates the process, but also wastes the raw material industrial silicon, resulting in high production costs. [0003] Earlier, the dichlorodihydrogen silicon method was used as a silicon source to produce semiconductor polysilicon. This method has a high production rate, but because the free radicals of silicon are relatively active and the reaction temperature is low, some materials will un...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/035
CPCC01B33/035
Inventor 冉祎余涛王琴何鹏李寿琴
Owner SICHUAN YONGXIANG POLY SILICON
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