Invisible detector based on hot carriers.

Abstract

The invention discloses an invisible detector based on hot carriers. The invisible detector comprises a substrate line, wherein a first conductive layer, a tunneling layer and a second conductive layer are sequentially and vapor deposited on the substrate line; electrodes are arranged on the first conductive layer and the second conductive layer; the first conductive layer, the tunneling layer andthe second conductive layer generate current during illumination, and generate Fano resonance at the same time; and the light field is not changed when the light of a specific wavelength is detected.The stealth detector based on the hot carriers is based on a hot carrier transport mechanism; the first conductive layer and the second conductive layer both serve as an optical element as well as serve as an electrical element, so that the function of the detector is highly integrated. Meanwhile, on the basis of a Fano resonance mechanism, the three-layer structures of the first conductive layer, the tunneling layer and the second conducting layer are sequentially and vapor deposited on the substrate line, so that under the excitation of light with specific wavelength, the scattering efficiency is extremely small, the background field is not damaged or disturbed while the photoelectric information is acquired, and an optical field of view is invisible.

Description

technical field [0001] The invention relates to the technical field of optical detection, in particular to a stealth detector based on hot carriers. Background technique [0002] A photodetector is an optoelectronic device that converts optical signals into electrical signals. It not only plays an important role in many fields of the national economy, but also plays a pivotal role in military defense. Traditional photodetectors are generally based on the PN junction formed by doping semiconductors (such as silicon and gallium arsenide) to regulate the transport and separation of electron-hole pairs, and then realize the conversion of optical signals to electrical signals. However, the response wavelength of semiconductor photodetectors depends on the property of the material itself, that is, the semiconductor band gap, and it is not easy to achieve flexible control of the detection wavelength. More importantly, semiconductor photodetectors have a strong effect on light scat...

AI Technical Summary

Problems solved by technology

Due to the complex structure of semiconductor detectors, it is difficult to combine photodetection and stealth technology

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