Semiconductor field effect transistor and preparation method thereof
A technology of field effect transistors and transistors, applied in the field of communication, can solve problems such as large switching loss, poor heat dissipation, and small breakdown voltage
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[0021] In order to make the purpose, features and advantages of the present invention more obvious and understandable, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described The embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making creative efforts belong to the protection scope of the present invention.
[0022] figure 1 A schematic structural diagram of a semiconductor field effect transistor provided for this embodiment, the transistor includes: a substrate (1), a drain electrode (2) below the substrate, and a drain electrode (2) placed vertically above the substrate in sequence away from the substrate no + Type SiC(3), n - Type SiC(4), P...
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Abstract
Description
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