Optical detector

Abstract

The invention provides an optical detector. The optical detector comprises a semiconductor component, a first electrode, a second electrode and a current detection component. The semiconductor component, the first electrode, the second electrode and the current detection component are electrically connected to each other to form a loop structure. The semiconductor component comprises a semiconductor structure, a carbon nanotube and a conductive film; the semiconductor structure comprises a P-type semiconductor layer and an N-type semiconductor layer, and defines a first surface and a second surface opposite to the first surface; the carbon nanotube is disposed on the first surface of the semiconductor layer; and the conductive film is formed on the second surface of the semiconductor structure by a deposition method, the semiconductor structure is disposed between the carbon nanotube and the conductive film, and the carbon nanotube, the semiconductor layer and the conductive film are laminated on each other to form a multi-layer three-dimensional structure.

Description

technical field [0001] The invention relates to a photodetector. Background technique [0002] A photodetector is a device that detects light energy. The working principle of general photodetectors is based on the photoelectric effect, based on the fact that the material absorbs light radiation energy and changes its electrical properties, so that the existence of light and the magnitude of light energy can be detected. Semiconductor devices are increasingly used in photodetectors. However, limited by the technical level, semiconductor devices are often micron structures, which limits the size of the photodetector to a certain extent and affects its application range. Contents of the invention [0003] In view of this, it is indeed necessary to provide a novel photodetector. [0004] A photodetector, which includes a semiconductor element, a first electrode, a second electrode and a current detection element, the semiconductor element, the first electrode, the second el...

AI Technical Summary

Problems solved by technology

However, limited by the technical level, semiconductor devices are often micron structures, which limits the size of the photodetector to a certain extent and affects its application range.

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