A ferroelectric memory anti-single event upset reinforcement method and system

Abstract

The invention discloses a ferroelectric memory anti-single event upset reinforcement method and system. The method includes the steps of carrying out a functional verification and full-parameter teston several ferroelectric memories to be strengthened, and obtaining the functional verification results and full-parameter test results; carrying out reactor neutron irradiation on the ferroelectric memory to be strengthened to obtain a pre-irradiated ferroelectric memory; monitoring induced radioactivity of the pre-irradiated ferroelectric memory to obtain a reinforced ferroelectric memory; carrying out a functional verification and full-parameter test on the reinforced ferroelectric memory, and comparing the functional verification result, the full-parameter test result with the functional verification result of the reinforced ferroelectric memory and the full-parameter test result of the reinforced ferroelectric memory; carrying out a single event upset test on the normally reinforced ferroelectric memory. Reinforced ferroelectric memories can be directly used to replace unreinforced ferroelectric memories without changing the top design and production process conditions of ferroelectric memories, which saves the development cost.

Description

technical field [0001] The invention relates to the field of anti-radiation hardening of semiconductor devices, in particular to a method and system for hardening anti-single event reversal of a ferroelectric memory. Background technique [0002] In space missions, semiconductor memory plays an important role in information acquisition and storage. With the development of aerospace technology, the demand for high-performance memory in related industries is increasing day by day. Ferroelectric memory is a new type of non-volatile memory. Compared with traditional storage solutions, it has many advantages such as high read and write durability, high-speed programming, ultra-low power consumption and easy embedding. [0003] Aerospace electronic devices exposed to the space environment will also face the threat of a variety of radiation effects, among which the single event effect is one of the main radiation effects that cause memory failures, so it is necessary to carry out ...

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Problems solved by technology

[0007] However, since the influence of trap charges on the polarization characteristics of ferroelectric capacitors is closely related to the polarization state of the capacitors before irradiation, the chip to be reinforced is irradiated with γ-rays from a 60Co source, and the interaction between high-energy γ-rays and ferroelectric materials , the method of introducing electron-hole pairs into the ferroelectric film is more suitable for chips that store fixed data. For chips that need to randomly store new data during service, the reinforcement effect is limited, and the trap charges will generate relatively large amounts of electricity over time. Obvious annealing degrades the reinforcement effect. The single event effect sensitive area of ​​ferroelectric memory is located in the peripheral circuit. Simply strengthening the memory array cannot solve the problem from the source.

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