Lithography method

Abstract

The present disclosure provides a method for lithography patterning. The method includes forming a resist layer over a substrate and performing an exposing process to the resist layer. The resist layer includes a polymer backbone, an acid labile group (ALG) bonded to the polymer backbone, a sensitizer bonded to the polymer backbone, a photo-acid generator (PAG), and a thermo-base generator (TBG).The method further includes baking the resist layer at a first temperature and subsequently at a second temperature. The second temperature is higher than the first temperature. The method further includes developing the resist layer in a developer, thereby forming a patterned resist layer.

Description

technical field [0001] Embodiments of the present invention relate to methods of fabricating semiconductor devices, and more particularly to compositions of photoresist films in EUV lithography and methods for using them. Background technique [0002] The semiconductor integrated circuit industry has experienced exponential growth. Technological advances in integrated circuit materials and design have resulted in each generation of integrated circuits being smaller and more complex than the previous generation. In the subject of integrated circuit evolution, functional density (the number of interconnected devices per unit chip area) usually increases as the geometric size (eg, the smallest component or circuit that can be formed by a process) shrinks. The advantage of shrinking the size of the process is to increase the production capacity and reduce the related costs, but it will also increase the complexity of the integrated circuit process. [0003] For example, EUV li...

AI Technical Summary

Problems solved by technology

However, developing polyhydroxystyrene photoresists in existing negative tone developers is accompanied by various problems that cause photoresist film loss, increased line edge roughness, increased line width roughness, and pattern distortion

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