Processing method for sector-shaped wafer

Abstract

Provided is a method for processing a section-shaped wafer; the method is capable of efficiently processing a large-diameter wafer, and processes the wafer by a processing feed amount suitable for a shape of a quarter wafer formed by dividing the wafer into four equal parts. The method includes the following steps: an information collecting step of collecting the shape of the four patterns of the1 / 4 wafer having different arc positions on the outer circumference and the information of the processing feed amount corresponding to the shapes of the four patterns when the 1 / 4 wafer is kept on a holding surface of a chuck table, wherein the crystal orientation of the 1 / 4 wafer is positioned according to predetermined orientation; a pattern selection step that holds the 1 / 4 wafer in which the crystal orientation is positioned in the predetermined orientation on the holding surface of the chuck table, calculates a square region in which the two sides of the 1 / 4 wafer are as the vertical andhorizontal sides, uses a camera unit to shoot each side so as to search for the presence or absence of a target pattern, and selects one of the four patterns according to the presence or absence of the target pattern; and a processing step of processing the held 1 / 4 wafer along a dividing line by a machining feed amount corresponding to the selected pattern.

Description

technical field [0001] The present invention relates to a processing method for dividing wafers such as semiconductor wafers and optical device wafers into four equal parts. Background technique [0002] Wafers such as a silicon wafer on which a plurality of semiconductor devices are formed on the front surface, a sapphire wafer or a SiC wafer on which a plurality of optical devices such as LEDs are formed are formed in a disc shape. [0003] Each device is divided by a plurality of predetermined dividing lines (separation lanes) perpendicular to each other, and cutting is performed with a cutting tool (cutting device) along the planned dividing lines, or a modified layer is formed by ablation processing or internal processing with a laser beam (Laser processing device) divides the wafer into individual device chips. [0004] In recent years, the processing time per wafer tends to become longer due to the miniaturization of device chips and the increase in diameter of wafer...

AI Technical Summary

Problems solved by technology

[0006] However, there is a problem that when dicing a 1 / 4 wafer (fan-shaped wafer) obtained by quartering a wafer, unless the processing feed rate corresponds to the shape of 1 / 4 wafer, it cannot be shortened. Processing time

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