A semiconductor wet oxidation apparatus

Abstract

The invention provides a semiconductor wet oxidation apparatus, including a water bath heating device, a reaction chamber in communication with the water bath heating device, a chamber heating devicelocated on a lower side of the reaction chamber, a real-time monitoring device for observing the wet oxidation reaction process of a semiconductor sample in the reaction chamber, the reaction chamberincludes a reaction chamber body, the reaction chamber body is of a double-layer structure and has an outer wall and an inner wall, the outer wall is provided with an outer air inlet hole, the inner wall is provided with a plurality of inner air inlet holes, the outer air inlet hole is connected with an air inlet pipe, the plurality of inner air inlet holes are composed of a plurality of small holes arranged in an array, and the inner wall is provided with an air outlet hole which communicates with an air outlet pipe. The porous structure of the reaction chamber can uniformly introduce N2/H2/H2O mixed reactant gas to ensure that the mixed reactant gas and a semiconductor wafer (material) react sufficiently and uniformly.

Description

technical field [0001] The application relates to a semiconductor wet oxidation device. Background technique [0002] In the prior art, some compound semiconductor devices require a wet oxidation process in the manufacturing process. The principle is to oxidize the semiconductor material with water vapor at a certain temperature to generate oxidized substances, so as to achieve the purpose of optimizing device performance. According to the research of Carol I. et al. (Ashby C I H, Bridges M M, Allerman A A, et al. Origin of the time dependence of wet oxidation of AlGaAs [J]. Applied physics letters, 1999, 75 (1): 73-75.), As a commonly used material for compound semiconductor devices, AlAs can react with water vapor at a certain temperature to form alumina (Al 2 o 3 ), [0003] AlAs+6H 2 O(g)→Al 2 o 3 +As 2 o 3 +6H 2 (g) [0004] For example, in light-emitting devices, materials containing Al components react with water vapor at a certain temperature to form alumin...

AI Technical Summary

Problems solved by technology

Since the reaction of materials containing Al components with water vapor is particularly sensitive to temperature and the concentration of water vapor, a small change in temperature will change the rate of oxidation reaction, and changes in the concentration of water vapor will also lead to changes in the rate of oxidation reaction, such as Al When the material oxidation reaction of the components is uneven or uncontrolled, it will affect the final performance of the device or even cause the device to fail

Existing wet oxidation devices cannot accurately control the oxidation reaction temperature, gas concentration and gas distribution uniformity, so that the wet oxidation reaction process cannot be precisely controlled

In addition, the heater of the existing wet oxidation furnace is covered with a graphite disk, dust particles will appear and pollute the semiconductor wafer material

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