Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device package and manufacturing method thereof

A semiconductor and ontology technology, applied in the direction of semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc., can solve problems affecting operation and so on

Active Publication Date: 2020-08-28
UNIVERSAL SCIENTIFIC INDUSTRIAL (SHANGHAI) CO LTD
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the level of electromagnetic radiation reaching a neighboring semiconductor device is sufficiently high, such radiation can adversely affect the operation of a neighboring semiconductor device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device package and manufacturing method thereof
  • Semiconductor device package and manufacturing method thereof
  • Semiconductor device package and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] As used herein, the singular terms "a", "an" and "the" may include plural referents unless the context clearly dictates otherwise.

[0015] As used herein, relative terms, for example, "inner", "inner", "outer", "outer", "top", "bottom", "front", "rear", "upper", "upper" , "lower", "downward", "vertically", "vertically", "sideways", "laterally", "above" and "beneath" refer to the position of a group of components relative to each other Orientation; this orientation is according to drawings and not required during manufacture or use.

[0016] figure 1 A layout diagram of the communication module 1 according to the embodiment of the present invention is explained. The communication module 1 can be (for example but not limited to) a front-end module (FEM) for wireless communication, which can be applied in a system adopting multiple input and multiple output (MEVIO) technology. Communication module 1 includes substrate 10, integrated circuit (IC) 11, radio frequency (RF...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor device package is disclosed which includes a substrate, at least one component, a packaging body, an EMI shield, and a conductive post. The assembly is located on a surface of the substrate. The packaging body packagess the at least one component. The EMI shield is conformably formed on the packaging body. The conductive post penetrates through the packaging body to electrically connect the EMI shield to a grounding electric contact of the substrate.

Description

technical field [0001] The present invention generally relates to semiconductor device packaging and methods of manufacturing the same. More particularly, the present invention relates to semiconductor device packages with electromagnetic interference shielding and methods of manufacturing the same. Background technique [0002] Semiconductor devices have become progressively more complex, at least in part, driven by the need for enhanced processing speed and smaller size. While the benefits of enhanced processing speed and smaller size are clear, these characteristics of semiconductor devices can also pose challenges. In particular, higher clock speeds may involve more frequent transitions between signal levels, which in turn may lead to higher levels of electromagnetic emissions at higher frequencies or shorter wavelengths. Electromagnetic emissions can be radiated from a source semiconductor device and can be incident on adjacent semiconductor devices. If the level of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/31H01L23/60
CPCH01L23/3107H01L23/60H01L2224/16225H01L2924/181H01L2924/19105H01L2924/00012
Inventor 林季民廖明文黄俊颖
Owner UNIVERSAL SCIENTIFIC INDUSTRIAL (SHANGHAI) CO LTD