Method for estimating potential hot spot and method for increasing hot spot process window

Abstract

The invention relates to a method for estimating potential hotspots, relating to semiconductor integrated circuit manufacturing technology, comprising: determining the maximum light intensity threshold (I_max_f) and the light intensity minimum threshold (I_min_f) according to the known hot spots of the wafer; After OPC correction, the original graphics boundary is divided into multiple correction segments by OPC processing, and a vertical line is generated at the midpoint of each correction segment; the optical model of the process window is used to simulate the direction of each correction segment along the vertical line Light intensity distribution; And in the light intensity distribution simulated by the D-F model and D-F+ model of the process window optical model, find out the figure that the light intensity maximum value (I_max) is less than or equal to the described light intensity maximum value threshold value (I_max_f) , in the light intensity distribution simulated by the D+F-model and the D+F+ model of the process window optical model, find out the figure whose light intensity minimum value (I_min) is greater than or equal to the described light intensity minimum value threshold value (I_min_f), to reach the cost The purpose of low cost, short cycle and simple process.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit manufacturing technology, in particular to a method for estimating potential hot spots and a method for increasing the process window of hot spots. Background technique [0002] In the manufacturing technology of semiconductor integrated circuits, hot spots in the mask layout directly affect the process window of hot spots and the yield of semiconductor devices, so it is extremely important to detect hot spots and solve hot spots. [0003] There are two commonly used hot spot detection methods: (1) process window certification; (2) potential hot spot fixed-point silicon wafer verification. However, both of these two methods need to determine the real hot spot after the photomask is published and the silicon wafer is verified, so the cost is high, the cycle is long and the process is complicated. At the same time, the follow-up hot spot solutions also need to readjust the existing process cond...

AI Technical Summary

Problems solved by technology

However, both of these two methods need to confirm the real hot spot after the photomask is published and the silicon wafer is verified, so the cost is high, the cycle is long and the process is complicated

At the same time, the follow-up hot spot solutions also need to readjust the existing process conditions or republish the mask to solve the problem of small hot spot process window

[0004] Therefore, common hotspot detection methods and solutions are costly, long cycle and complicated process

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