Semiconductor device and method of forming the same

Abstract

A semiconductor device and a method for forming the same are provided, the method comprising: a first region and a second region of a substrate corresponding to a second doped region having a first doped region and a blocked ion, respectively; forming a first metal layer on the surfaces of the first doped region and the second doped region; performing a first annealing so that the first metal layer reacts with the first source-drain doped region surface material and the second source-drain doped region surface material respectively to correspondingly form a first initial metal silicide layer and a second metal silicide layer with barrier ions; forming a second metal layer different from the first metal layer material on the surfaces of the first initial metal silicide layer and the secondmetal silicide layer; performing a second annealing at a temperature lower than that used for the first annealing, wherein atoms of the second metal layer diffuse to the first initial metal silicide layer to form a first metal silicide layer such that ions blocking ions block atoms of the second metal layer from diffusing into the second metal silicide layer. The method simplifies the process.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] MOS transistors are one of the most important components in modern integrated circuits. The basic structure of a MOS transistor includes: a semiconductor substrate; a gate structure located on the surface of the semiconductor substrate, and source and drain doped regions located in the semiconductor substrate on both sides of the gate structure. The working principle of the MOS transistor is: by applying a voltage to the gate structure, the current in the channel at the bottom of the gate structure is adjusted to generate a switching signal. [0003] The MOS transistors include N-type MOS transistors and P-type MOS transistors. The metal silicide on the surface of the source-drain doped region in the N-type MOS transistor needs to select a suitable material, so that the metal silicide o...

AI Technical Summary

Problems solved by technology

[0004] However, the process of forming semiconductor devices including N-type MOS transistors and P-type MOS transistors in the prior art is relatively complicated

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