Silicon oxide-silicon interface-state density and capturing interface testing method

Abstract

The invention discloses a silicon oxide-silicon interface-state density and capturing interface testing method. The method comprises: step one, growing a silicon oxide film on one surface of a siliconwafer, growing a thin metal film on the surface of the silicon oxide film, and then scrubbing a InGa solution on the other surface of the silicon wafer to obtain an MIS structure device for electrical testing; step two, carrying out capacitor transient testing at different test temperatures T, acquiring changing information of the capacitor during the carrier emission process, and carrying out conversion to obtain a transient capacitor with a charge density of Nit; carrying out derivation on the Nit with respect to time t to obtain emission rates ep of charges at different test temperatures;and step three, under the charge density obtained at different test temperatures T, calculating a function of ln(ep / T2) with respect to 1 / T and calculating distribution of the interface-state densityand capturing interface with the energy level respectively according to a slope and an intercept. With the testing method, distribution of the capturing interface and the interface-state density withthe energy level is obtained. The testing method is applied widely.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method for testing silicon oxide-silicon interface state density and trapping interface. Background technique [0002] As the line width of devices decreases year by year, the impact of interface defects in devices on the macroscopic electrical properties of devices will become increasingly severe. The interface defect between silicon and silicon oxide is one of the common types of defects in industrially produced devices, mainly because silicon oxide is often used as gate oxide or buried oxide and is widely used in integrated circuits. Interface defects will act as recombination centers of carriers, leading to an increase in leakage current, thereby increasing the noise signal of silicon-based devices at low frequencies in semiconductor devices. Buried oxygen-silicon interface defects in bipolar transistors will lead to an increase in base-level leakage current, thereb...

AI Technical Summary

Problems solved by technology

However, the relevant measurement techniques widely used at present, including high-low frequency C / V test and deep energy level transient spectrum test, cannot obtain the change of capture cross section with the position distribution of energy level, but use a constant capture cross section

Obviously, this does not correspond to the actual situation

And this will further affect the accuracy of the test results of interface state density with energy level distribution

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