Method for monitoring and diagnosing forward blocking characteristics of embedded SiC-GTO device

Abstract

The invention discloses a method for monitoring and diagnosing forward blocking characteristics of an embedded SiC-GTO device. According to the method, based on a high temperature reverse bias test, indirect characterization parameters with AG junction electrical characteristic as device blocking voltage is proposed for an SiC-GTO power device, the forward blocking performance of the device is evaluated based on a designed monitoring sampling circuit and a correlation vector machine algorithm, and the forward blocking characteristics of the SiC-GTO device can be effectively monitored online bythe whole method. According to the method, the blank of the research of an embedded monitoring and diagnosis method of SiC-GTO forward blocking characteristics at present is filled, the forward blocking characteristics are indirectly characterized by selecting low-voltage characteristic parameters, the dependence on special high-voltage equipment in a current device blocking characteristic test process is overcome, the forward blocking characteristics of the SiC-GTO device can be monitored online through an embedded monitoring circuit, the high integration of the monitoring circuit and a power circuit is achieved, the applications are flexible, and economic cost and labor cost are saved.

Description

technical field [0001] The invention relates to the technical field of embedded monitoring and diagnosis of the health status of SiC-GTO power devices, in particular to a method for monitoring and diagnosing the forward blocking characteristics of embedded SiC-GTO devices. Background technique [0002] In recent years, high-voltage power devices based on silicon carbide (SiC), a wide-bandgap semiconductor material, have developed rapidly. SiC-GTO power devices have the advantages of high blocking voltage, large current, fast turn-off, low forward voltage drop and high temperature resistance, and have lower on-resistance than SiC MOSFET, lower than Si IGBT and SiC IGBT The conduction voltage drop, lower power consumption and higher operating temperature make SiC-GTO power devices a research hotspot for high-voltage and high-power applications. Power devices are one of the most important components that affect the reliability of power electronic systems, and their performance...

AI Technical Summary

Problems solved by technology

The blocking voltage of the device is an important parameter to measure its performance. Since it is as high as several thousand volts, special high-voltage equipment (such as semiconductor parameter testers, etc.) must be used for displacement measurement during the measurement process. Due to the high manufacturing cost of such equipment, the equipment It occupies a large space, and the test equipment requires high precision, which is not suitable for moving, and cannot be monitored online in the actual circuit device working circuit or in the working state of the device. The device needs to be removed from the system before testing can be performed, so it is difficult Direct measurement of the blocking characteristics of the device in the working circuit or in-situ flexible testing in different application sites, and manual operation of the test equipment for test analysis, the efficiency is low, so the application of the device monitoring is greatly limited

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