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A device packaging method based on inorganic thin film

An inorganic thin film and device packaging technology, which is applied in the field of device packaging, can solve the problems of poor water and oxygen barrier effect in the packaging process, and achieve the effect of improving the water and oxygen barrier effect, improving the compactness, reducing the gap and the passage of water and oxygen.

Active Publication Date: 2020-11-17
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above deficiencies in the prior art, the purpose of the present invention is to provide a device packaging method based on an inorganic thin film, aiming to solve the problem of poor water and oxygen barrier effect in the existing device packaging process

Method used

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  • A device packaging method based on inorganic thin film

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Effect test

Embodiment 1

[0057] Using HDMSO as a precursor, a SiO film was formed on the surface of a QLED device by PECVD, wherein the amount of HDMSO was controlled so that after the SiO film was formed on HDMSO, the ratio of the remaining HDMSO to the weight of the SiO film was 1:50, and the device Put it into the HHIC reactor, H plasma beam energy 100eV, react for 30min, and form a dense packaging film with a film thickness of 100nm on the surface of the QLED.

Embodiment 2

[0059] Using zinc acetate dihydrate as a precursor, the PECVD method is used to form a ZnS film on the surface of the QLED device, wherein the amount of zinc acetate dihydrate is controlled so that after the ZnS film is formed, the remaining zinc acetate dihydrate accounts for The weight ratio of the ZnS film is 50:1. Put the device into the HHIC reactor, H plasma beam energy 10eV, react for 10min, and form a dense packaging film with a film thickness of 30nm on the surface of the QLED.

Embodiment 3

[0061] Using zinc acetate dihydrate as a precursor, the PECVD method is used to form a ZnS film on the surface of the QLED device, wherein the amount of zinc acetate dihydrate is controlled so that after the ZnS film is formed, the remaining zinc acetate dihydrate accounts for The weight ratio of the ZnS film is 1:1. Put the device into the HHIC reactor, H plasma beam energy 50eV, react for 15min, and form a dense packaging film with a film thickness of 75nm on the surface of the QLED.

[0062] In summary, the present invention provides a device packaging method based on inorganic thin films. By controlling the reaction dosage of organic precursors, an inorganic thin film is generated on the surface of the device by PECVD; Cross-link with the inorganic film to form a packaging film layer on the surface of the device; through the method of the present invention, the compactness of the packaging film can be greatly improved, and the gaps inside the packaging film and the passage ...

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Abstract

The invention discloses a device packaging method based on an inorganic thin film, which comprises the steps of: controlling the reaction dosage of an organic precursor to generate an inorganic thin film on the surface of a device; putting the inorganic thin film into a HHIC reactor and passing H 2 , the H 2 After ionization, H plasma is formed, and the organic precursors or the organic precursor and the inorganic film are cross-linked by the H plasma, forming a layer of packaging film on the surface of the device; through the present invention The method can greatly improve the compactness of the encapsulation film, reduce the gaps inside the encapsulation film and the water and oxygen passing paths, thereby improving the water and oxygen barrier effect of the encapsulation film.

Description

technical field [0001] The invention relates to the technical field of device packaging, in particular to a device packaging method based on an inorganic thin film. Background technique [0002] Semiconductor quantum dots (Quantum dots, QDs) have the characteristics of high fluorescence quantum efficiency, adjustable luminescence in the visible light band, and wide color gamut coverage. Light-emitting diodes using quantum dots as light-emitting materials are called quantum dot light-emitting diodes (QLEDs), which have the advantages of saturated colors, higher energy efficiency, better color temperature, and long life, and are expected to become the next generation Mainstream technology for solid state lighting and flat panel displays. [0003] After the preparation of various functional layers and quantum dot light-emitting layers, QLED devices need to be encapsulated by thin films; because the encapsulation film is not microscopically dense, it is necessary to use multi-l...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/52H01L51/56
CPCH10K50/84H10K71/00
Inventor 向超宇钱磊曹蔚然杨一行
Owner TCL CORPORATION