mems electrode structure and its manufacturing method
A technology of electrode structure and manufacturing method, applied in the direction of microstructure technology, microstructure device, manufacturing microstructure device, etc., can solve the problems of etching residual photoresist, peeling, etc., to prevent photoresist peeling and etching Residue, quality improvement effect
Active Publication Date: 2021-04-06
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
[0007] The etching of the TiN layer 103 usually adopts wet etching, and due to the existence of the step structure, problems such as etching residue and photoresist stripping are likely to occur in the wet etching of the TiN layer 103
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Embodiment Construction
[0032] Such as figure 2 Shown is a device structure diagram of the MEMS electrode structure of the embodiment of the present invention. The MEMS electrode structure of the embodiment of the present invention is formed by superimposing a TiN pattern layer 2 and an amorphous silicon pattern layer 3 .
[0033] The TiN pattern layer 2 is formed on the surface of the flat semiconductor substrate 1 .
[0034] The amorphous silicon pattern layer 3 is superimposed on the surface of the TiN pattern layer 2 and partly extends to the surface of the semiconductor substrate 1 outside the TiN pattern layer 2 .
[0035] The amorphous silicon pattern layer 3 has a step structure, and the adverse effect of the step structure on the etching of the TiN pattern layer 2 is prevented by placing the TiN pattern layer 2 at the bottom of the amorphous silicon pattern layer 3 .
[0036] In the embodiment of the present invention, the main structure of the MEMS is formed in the semiconductor substrat...
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The invention discloses a MEMS electrode structure. The electrode structure is formed by stacking a TiN pattern layer and an amorphous silicon pattern layer; the TiN pattern layer is formed on a flat semiconductor substrate surface; the amorphous silicon pattern layer is superimposed on the surface of the TiN pattern layer And partially extend to the surface of the semiconductor substrate outside the TiN pattern layer; the amorphous silicon pattern layer has a stepped structure, and the TiN pattern layer is positioned at the bottom of the amorphous silicon pattern layer to prevent the adverse effect of the step structure on the etching of the TiN pattern layer . The invention also discloses a method for manufacturing the MEMS electrode structure. The invention can prevent etching residue and photoresist stripping during the patterned etching process of the electrode structure, and improve product quality.
Description
technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a MEMS electrode structure. The invention also relates to a method for manufacturing the MEMS electrode structure. Background technique [0002] Such as Figure 1A to Figure 1E Shown is a device structure diagram in each step of the manufacturing method of the existing MEMS electrode structure; the manufacturing method of the existing MEMS electrode structure includes the following steps: [0003] Step 1, such as Figure 1A As shown, a semiconductor substrate 101 with a flat surface is provided; as Figure 1B As shown, an amorphous silicon layer 102 is formed on the surface of the semiconductor substrate 101 . [0004] Step two, such as Figure 1C As shown, the amorphous silicon layer 102 is patterned by photolithography plus etching process to form the amorphous silicon pattern layer 102; it can be seen that the amorphous silicon pattern layer 10...
Claims
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IPC IPC(8): B81B7/02B81C1/00
CPCB81B7/02B81C1/00015
Inventor 刘善善朱黎敏
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP