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Graphite base

A graphite base and edge technology, applied in gaseous chemical plating, crystal growth, coating and other directions, can solve the problem of inconsistent emission wavelengths of epitaxial wafers, and achieve improved intra-chip uniformity and edge yield, consistent emission wavelengths, heat-reducing effect

Active Publication Date: 2019-01-08
HC SEMITEK ZHEJIANG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The embodiment of the present invention provides a graphite base, which can solve the problem in the prior art that the substrate is in contact with the side wall of the pocket under the action of centrifugal force, resulting in inconsistent light emission wavelengths in various regions of the epitaxial wafer

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Embodiment Construction

[0023] In order to make the objectives, technical solutions and advantages of the present invention clearer, the embodiments of the present invention will be described in further detail below in conjunction with the accompanying drawings.

[0024] The embodiment of the present invention provides a graphite base. figure 1 Is a schematic structural diagram of a graphite base provided by an embodiment of the present invention, figure 2 for figure 1 A-A cross-sectional view. See figure 1 with figure 2 , The graphite base is provided with a plurality of pockets 10 for accommodating the substrate, and the edge of each pocket 10 is provided with a bump 11 for suspending the substrate in the pocket. The area enclosed by the bump 11 and the graphite A groove 12 is provided in the part with the farthest distance between the centers of the bases.

[0025] In the embodiment of the present invention, a groove is provided at the part with the furthest distance from the center of the graphite...

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Abstract

The invention discloses a graphite base, and belongs to the technical field of semiconductors. A plurality of pockets for accommodating substrates are arranged on the graphite base, a bump used for suspending each substrate in each pocket is arranged on the edge of each pocket, and grooves are formed in parts having the furthest distances between the areas surrounded by the bumps and the center ofthe graphite base. According to the invention, the grooves are formed in the parts having the furthest distances between the areas surrounded by the bumps and the center of the graphite base to increase the distance between the parts and the substrates suspended above, thereby reducing the heat conducted to the substrates by the parts to balance elevated temperature because the substrates suspended above the parts are in close contact with the sidewalls of the pockets, so that the temperatures of areas of an epitaxial wafer are balanced, the luminous wavelengths of the areas of the epitaxialwafer are consistent, and the in-chip uniformity and edge yield of the epitaxial wafer are improved.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a graphite base. Background technique [0002] A semiconductor light emitting diode (English: Light Emitting Diode, abbreviated as: LED) is a semiconductor diode that can convert electrical energy into light energy. LED has the advantages of high efficiency, energy saving, green and environmental protection, and has a wide range of applications in the fields of traffic indication, outdoor full-color display and so on. In particular, the use of high-power LEDs to achieve semiconductor solid-state lighting is expected to become a new generation of light sources and enter millions of households, causing a revolution in the history of human lighting. [0003] The epitaxial wafer is the primary finished product in the LED manufacturing process. When forming the epitaxial wafer, the substrate is placed on the tray in the reaction chamber of the Metal Organic Chemical Vapor De...

Claims

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Application Information

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IPC IPC(8): C23C16/458C30B25/12
CPCC23C16/4581C30B25/12
Inventor 乔楠徐晓波李昱桦刘旺平胡加辉
Owner HC SEMITEK ZHEJIANG CO LTD