ESD protection circuit

Abstract

An embodiment of the present application discloses an ESD protection circuit, comprising a negative ESD protection module and a positive ESD protection module, wherein the negative ESD protection module comprises a first resistor, a charging capacitor, a first field effect transistor and a second field effect transistor, and the positive ESD protection module comprises a fourth field effect transistor. When a negative ESD event occurs, the gate of P-type GAN enhanced power supply will have a large transient voltage relative to the source, so that a displacement current from the source to the gate of the P-type GAN enhanced power supply is generated on the recharge capacitor, as that first field effect transistor is tur on, the first field effect transistor and the second field effect transistor form a path, thereby releasing negative ESD energy from the grid relative to the source. At that same time, when a negative steady-state voltage is apply to the gate electrode with respect to the source electrode, the first field effect transistor is in an off state, so that the negative voltage test at the steady-state state can be compatible.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular to an ESD protection circuit. Background technique [0002] Wide bandgap semiconductor power devices are power devices based on third-generation semiconductor materials, mainly including diamond power devices, silicon carbide SiC power devices, gallium nitride GaN power devices, etc. Among them, GaN power devices are widely used in the industry due to their advantages such as high breakdown electric field, high electron saturation velocity and high electron mobility in heterostructures. The current mainstream lateral GaN power device is based on the AlGaN / GaN heterojunction structure, through the introduction of a special gate structure to deplete the two-dimensional electron gas below the channel to achieve an enhanced (that is, normally-off device, defined as the threshold Voltage Vth>0) work has been applied to the power converter and its related driving circ...

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Problems solved by technology

[0005] However, since the above-mentioned ESD circuit conducts a large current when the gate and source of the P-type GAN enhanced power device 30 have a reverse voltage bias, the ESD circuit and the gate negative voltage test for detecting gate-related defects incompatible, making it difficult for the device to balance reliability and ESD tolerance

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