A photoresist, a preparation method and application thereof, and a photolithography method

Abstract

The invention belongs to the field of semiconductors and integrated circuits, and discloses a photoresist, a preparation method, an application and a photolithography method thereof. The photoresist comprises a resin and a photoacid generator, wherein the resin is composed of 20- 45 wt% of monomers i, 35 wt% - 65 wt% of monomer ii, 10- 30 wt% of a monomer iii, wherein the structures of the monomeri, the monomer ii and the monomer iii are represented by the formula (1), the formula (2) and the formula (3), respectively. The photoresist provided by the invention can improve the adhesion betweenthe photoresist and the surface of the substrate, and the photoresist exposure rate is accelerated, the photoresist reaction energy is reduced, the etching rate of the photoresist is reduced, or thereaction probability is reduced when the photoresist is developed, so that there is no hole or gap between the photoresist and the surface of the substrate, the photoresist can be fully developed after filling the bottom of the deep trench, and the surface of the substrate pattern is still completely covered by the photoresist.

Description

technical field [0001] The invention belongs to the field of semiconductors and integrated circuits, and in particular relates to a photoresist, its preparation method and application, and a photolithography method. Background technique [0002] In the past technology, if the storage density per unit size of NAND flash memory is to be increased, the production process must be improved. Now 3D memory cell arrays are used to increase the cell density and data capacity under the existing process, while the core size of the chip (Die Size) hardly increases. In the new stacking architecture, the pillars made of electrode materials will vertically penetrate the multi-layer stacked storage elements, and can share peripheral circuits. [0003] Etching technology is used to perforate holes in the stacked layers (ie, multi-layer gate electrodes and insulating films). The pillars will allow the deposition process to fill these holes, and the pillars are surrounded by gate circuits. T...

AI Technical Summary

Problems solved by technology

One is that the adhesion between the photoresist and the substrate surface is not good, resulting in voids or gaps where the bottom of the photoresist pattern contacts the substrate surface

The second is that after filling the deep trench, the photoresist at the bottom of the deep trench cannot be fully developed due to insufficient light transmittance or incomplete photoacid reaction, and the remaining photoresist blocks the etching

The third is that the photoresist is not enough to block deep trench etching

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